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ON Semiconductor BSS138-F169

Part No.:: BSS138-F169

Manufacturer:: ON Semiconductor

Package:: SOT-23-3 (TO-236)

Datasheet:

Description:: MOSFET N-CH SOT23

In Stock:: 2743

Quantity:: Add To Cart

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BSS138-F169 Specifications

Packaging:
Tape & Reel (TR)
Series:
-
ProductStatus:
Obsolete
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
50 V
Current-ContinuousDrain(Id)@25°C:
220mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
4.5V, 10V
RdsOn(Max)@IdVgs:
3.5Ohm @ 220mA, 10V
Vgs(th)(Max)@Id:
1.5V @ 1mA
GateCharge(Qg)(Max)@Vgs:
2.4 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
27 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
360mW (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

BSS138-F169 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including BSS138-F169 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for BSS138-F169 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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BSS138-F169 information

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BSS138-F169 Typical application Circuitry

The BSS138-F169 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), specifically designed for high-speed switching and signal amplification in a variety of electronic applications. The "F169" in its name likely indicates a particular specification or variant within the BSS138 series, potentially relating to packaging, electrical characteristics, or performance standards. N-channel MOSFETs like the BSS138-F169 are efficient in controlling electrical currents and are commonly used in numerous applications.

Functional Role

N-Channel MOSFET: The BSS138-F169 functions as an N-channel MOSFET, ideal for applications requiring rapid switching and efficient signal handling.

Application Scenarios

In Digital Logic Interfaces: Frequently used in digital logic interfaces for controlling logic levels and switching operations.

For Charge Pump Circuits: Commonly employed in charge pump circuits for voltage conversion and regulation.

Key Parameters

Efficient Power Conductance: The BSS138-F169's low on-resistance ensures efficient power conductance, minimizing power losses.

High-Speed Switching: Designed for high-speed switching, making it suitable for dynamic electronic applications.

Circuit Example: Voltage Conversion in a Charge Pump

Design Objective: Creating a voltage conversion circuit in a charge pump using the BSS138-F169.

Detailed Circuit Construction

1. Power Source Connection: Start with a DC power source appropriate for the charge pump's operational voltage.

2. MOSFET Integration: Incorporate the BSS138-F169 by connecting its drain pin (Pin 1) to the charge pump circuit.

3. Control Signal Setup: Connect a control signal from a voltage regulation IC to the gate pin (Pin 2) of the BSS138-F169 to regulate voltage.

4. Source Pin Grounding: Attach the source pin (Pin 3) of the MOSFET to the circuit's ground to complete the current path.

5. Output and Load Connection: Interface the output of the charge pump with the regulated voltage to the intended load or subsequent circuit.

Design Considerations

When designing circuits with the BSS138-F169, consider these aspects:

1. Appropriate Gate Voltage: Ensure the gate voltage is suitable for effective MOSFET operation without causing damage.

2. Thermal Management: Implement heat dissipation measures if the MOSFET is expected to handle high currents.

3. Signal Integrity: Maintain the clarity of the control signal, crucial in voltage regulation applications.

4. Load Compatibility: Ensure that the load's specifications align with the MOSFET's operational capabilities.

5. Circuit Protection: Incorporate elements like overcurrent protection to safeguard the MOSFET and connected components.

6. Minimizing Parasitic Effects: Design the circuit layout to reduce parasitic capacitance and inductance, crucial for maintaining high-speed performance.

7. Stable Power Supply: Use a regulated power source to prevent fluctuations that could impact the MOSFET's function.

8. Environmental Adaptability: Consider operating conditions like temperature and humidity, which might affect the MOSFET's performance.

In summary, the BSS138-F169 N-channel MOSFET is an efficient component, particularly effective for applications like voltage conversion in charge pump circuits. Its low on-resistance and high-speed switching capabilities make it a valuable choice in modern electronic designs. Key considerations for circuit integration include gate voltage precision, thermal management, signal integrity, and protective measures, ensuring optimal performance and reliability.

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6. What is the process for return or replacement of BSS138-F169?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of BSS138-F169.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations