What is the Additional Feature ?

Name: BSS138-7-F
Brand: Diodes Incorporated
SKU: BSS138-7-F
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Diodes Incorporated BSS138-7-F

Part No.:: BSS138-7-F

Manufacturer:: Diodes Incorporated

Package:: SOT-23-3

Datasheet:: BSS138-7-F.pdf

Description:: MOSFET N-CH 50V 200MA SOT23-3

In Stock:: 3748

Quantity:: Add To Cart

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BSS138-7-F Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
-
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
50 V
Current-ContinuousDrain(Id)@25°C:
200mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
3.5Ohm @ 220mA, 10V
Vgs(th)(Max)@Id:
1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs:
-
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
50 pF @ 10 V
FETFeature:
-
PowerDissipation(Max):
300mW (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

BSS138-7-F this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including BSS138-7-F price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for BSS138-7-F to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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BSS138-7-F information

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BSS138-7-F Typical application Circuitry

BSS138-7-F

The BSS138-7-F is a specialized N-channel MOSFET, a component acclaimed for its efficiency in rapid switching and signal amplification within electronic circuits.

Key Characteristics

On-Resistance Feature: Exhibits low on-resistance, a hallmark of efficient power utilization, crucial for minimizing energy loss across various applications.

Switching Speed: The MOSFET is characterized by its high-speed switching ability, a vital attribute for dynamic and responsive electronic systems.

Ideal Applications

In Microcontroller-Based Projects: Serves as a reliable component in microcontroller-based systems for controlling peripheral devices like sensors or small motors.

Voltage Level Shifting: It is particularly adept at voltage level shifting, making it integral in interfaces between components operating at different logic levels.

Circuit Integration: A Microcontroller Interface

Design Objective: Crafting a microcontroller interface circuit with the BSS138-7-F for controlling an external device.

Detailed Circuit Design

1. Power Source: Initiate with a power source corresponding to the microcontroller's voltage specifications.

2. MOSFET Deployment: Connect the drain of the BSS138-7-F (Pin 1) to the control point of the external device (e.g., a sensor or motor).

3. Gate Activation: Interface the microcontroller's output (GPIO) with the gate (Pin 2) of the MOSFET. This setup allows control signals to modulate the external device's operation.

4. Common Grounding: Establish a common ground by connecting the source (Pin 3) of the MOSFET to the microcontroller's ground, ensuring circuit stability.

5. Device Integration: The external device is then configured to respond to the MOSFET's switching, dictated by the microcontroller's logic.

Circuit Design Considerations

1. Gate Voltage Calibration: Precisely calibrate the gate voltage to match the MOSFET's switching requirements without inducing overload.

2. Heat Dissipation Strategy: In scenarios of continuous high current flow, devise effective heat dissipation measures.

3. Signal Integrity and Clarity: Uphold the integrity of the control signals from the microcontroller to ensure precise device operation.

4. Device Compatibility: Ascertain the compatibility of the external device with the MOSFET's current and voltage handling capabilities.

5. Protective Mechanisms: Incorporate circuit protection strategies, such as overcurrent protection, to safeguard both the MOSFET and the connected device.

6. Parasitic Capacitance Concerns: Pay attention to minimizing parasitic effects to preserve the high-speed nature of the MOSFET.

7. Regulated Power Supply Utilization: Use a regulated power source for stable operation and to prevent voltage fluctuations.

8. Adaptability to Environmental Variations: Consider the impact of environmental factors, like temperature changes and humidity, on the MOSFET's performance.

In summary, the BSS138-7-F MOSFET emerges as a pivotal component in microcontroller-based circuits, especially for controlling external devices and facilitating voltage level shifting. Its low on-resistance and high-speed switching attributes are critical for efficient and responsive electronic designs. Essential considerations in deploying this MOSFET include precise gate voltage calibration, thermal management, signal integrity, and the integration of protective mechanisms to ensure a robust and reliable circuit.

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6. What is the process for return or replacement of BSS138-7-F?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the BSS138-7-F we delivered, we will accept the replacement or return of the BSS138-7-F only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of BSS138-7-F.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations