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ON Semiconductor BSS123LT1G

Part No.:: BSS123LT1G

Manufacturer:: ON Semiconductor

Package:: SOT-23-3 (TO-236)

Datasheet:: BSS123LT1G.pdf

Description:: MOSFET N-CH 100V 170MA SOT23-3

In Stock:: 3810

Quantity:: Add To Cart

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BSS123LT1G Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk
Series:
-
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
100 V
Current-ContinuousDrain(Id)@25°C:
170mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
6Ohm @ 100mA, 10V
Vgs(th)(Max)@Id:
2.6V @ 1mA
GateCharge(Qg)(Max)@Vgs:
-
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
20 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
225mW (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

BSS123LT1G this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including BSS123LT1G price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for BSS123LT1G to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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BSS123LT1G information

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BSS123LT1G Typical application Circuitry

BSS123LT1G

The BSS123LT1G is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), designed primarily for high-speed switching and signal amplification in various electronic applications. The "LT1G" in its designation likely refers to a specific packaging or series within the broader BSS123 MOSFET lineup. N-channel MOSFETs like the BSS123LT1G are crucial in scenarios requiring efficient control of electrical current. They're particularly celebrated for their high-speed switching capabilities.

Functional Description

N-Channel MOSFET Role: The BSS123LT1G functions as an N-channel MOSFET, optimized for applications that demand rapid switching and precise signal handling.

Application Scenarios

In Power Supply Units: It's often used in power supply circuits for efficient voltage and current regulation.

For Microcontroller Interfaces: Integral in microcontroller-driven applications, for controlling various peripherals and sensors.

Key Parameters

Efficient Power Handling: The BSS123LT1G boasts a low on-resistance, a crucial feature for effective power handling and minimizing losses.

Fast Switching Speed: It excels in high-speed switching, a necessary attribute for dynamic electronic applications.

Circuit Example: Microcontroller-Driven LED Control

Design Objective: Constructing an LED control circuit for a microcontroller using the BSS123LT1G.

Circuit Design Details

1. Power Source Integration: Start with a 5V DC power source, typically the operating voltage for common microcontrollers.

2. MOSFET Placement: Incorporate the BSS123LT1G, connecting its drain pin (Pin 1) to the anode of the LED, facilitating control over the LED.

3. Control Signal Application: Attach a digital output (PWM signal) from the microcontroller to the gate pin (Pin 2). This setup allows for adjustable LED brightness.

4. Grounding the Source: Connect the source pin (Pin 3) of the BSS123LT1G to the common ground of the circuit, ensuring a complete path for current.

5. LED and Protective Measures: Link the cathode of the LED to the ground and incorporate a current-limiting resistor in series with the LED for overcurrent protection.

Design Considerations

When designing circuits with the BSS123LT1G, focus on these aspects:

1. Gate Voltage Management: Ensure that the gate voltage is suitable to fully switch the MOSFET without overloading.

2. Heat Dissipation: Implement measures for heat management, especially if the MOSFET operates at high currents.

3. Signal Integrity: In PWM applications, maintaining the clarity of the control signal is vital for accurate LED brightness control.

4. Load Compatibility: The LED's electrical characteristics should align with the BSS123LT1G's operational limits.

5. Circuit Protection: Include elements like overcurrent protection to safeguard the MOSFET and the LED.

6. Parasitic Capacitance: Design the circuit to minimize parasitic capacitance, enhancing high-speed performance.

7. Power Supply Stability: Use a stable power supply to prevent voltage fluctuations that could impact the MOSFET's function.

8. Environmental Factors: Account for potential environmental impacts on the MOSFET, such as variations in temperature and humidity.

In summary, the BSS123LT1G N-channel MOSFET is a highly efficient component, particularly effective for applications like LED control in microcontroller-based systems. It is characterized by low on-resistance and fast switching capabilities. Key considerations when integrating this MOSFET into a circuit include gate voltage precision, thermal management, signal clarity, and protective measures, ensuring optimal performance and reliability.

BSS123LT1G FAQ

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6. What is the process for return or replacement of BSS123LT1G?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the BSS123LT1G we delivered, we will accept the replacement or return of the BSS123LT1G only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of BSS123LT1G.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations