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Nexperia USA Inc. BSS123/LF1R

Part No.:: BSS123/LF1R

Manufacturer:: Nexperia USA Inc.

Package:: TO-236AB

Datasheet:: BSS123/LF1R.pdf

Description:: MOSFET N-CH 100V 150MA TO236AB

In Stock:: 2645

Quantity:: Add To Cart

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BSS123/LF1R Specifications

Packaging:
Tape & Reel (TR)
Series:
TrenchMOS™
ProductStatus:
Obsolete
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
100 V
Current-ContinuousDrain(Id)@25°C:
150mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
6Ohm @ 120mA, 10V
Vgs(th)(Max)@Id:
2.8V @ 1mA
GateCharge(Qg)(Max)@Vgs:
-
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
40 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
250mW (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

BSS123/LF1R this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including BSS123/LF1R price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for BSS123/LF1R to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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BSS123/LF1R information

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BSS123/LF1R Typical application Circuitry

BSS123 LF1R

The BSS123/LF1R is a variant of the BSS123, which is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). This type of transistor is widely used for switching and amplifying electronic signals in various applications. The "/LF1R" suffix may indicate specific packaging, manufacturing process, or compliance with certain standards (such as lead-free or RoHS compliant). Like other N-channel MOSFETs, the BSS123/LF1R is known for its high-speed switching capabilities and is often used in digital and power management circuits.

Functional Characteristics

N-Channel MOSFET: The BSS123/LF1R functions as an N-channel MOSFET, ideal for applications requiring fast switching and efficient signal processing.

Application Scenarios

Digital Logic Circuits: Commonly used in digital circuits for logic switching functions.

Power Management: Employed in power management systems for efficient control of power flow, especially in portable and compact electronic devices.

Key Parameters

Low On-Resistance: Features low on-resistance, enhancing efficiency, particularly in high-current applications.

High-Speed Switching Capability: Suitable for high-speed switching, making it ideal for digital and power management applications.

Circuit Example: Power Management in Portable Devices

Selected Application: Designing a power management circuit for a portable device using the BSS123/LF1R.

Detailed Circuit Implementation

1. Power Source Connection: Connect a suitable power source, such as a lithium-ion battery.

2. BSS123/LF1R Integration: Incorporate the BSS123/LF1R by connecting its drain pin (Pin 1) to the load, which could be a power control input of the device.

3. Input Signal Configuration: Attach a control signal (from a microcontroller, for example) to the gate pin (Pin 2) to regulate the power flow.

4. Grounding the Source: Link the source pin (Pin 3) of the BSS123/LF1R to the ground of the circuit.

5. Load and Protection Setup: Connect the load to the drain and include appropriate protection components such as a current-limiting resistor if necessary.

Design Considerations

When designing circuits with the BSS123/LF1R, consider the following:

1. Gate Voltage Adequacy: Ensure the gate voltage is appropriate to fully activate the MOSFET.

2. Thermal Management: Consider heat management, especially in applications where the MOSFET handles significant current.

3. Signal Integrity: Maintain signal integrity, crucial in high-frequency or digital applications.

4. Load Compatibility: Make sure the MOSFET's specifications match the load requirements.

5. Circuit Protection Strategies: Implement protection mechanisms like overcurrent protection for the safety of the MOSFET and the load.

6. Parasitic Capacitance Minimization: Design the circuit to reduce parasitic capacitance that could impact performance.

7. Stable Power Supply: Use a stable power supply to prevent fluctuations affecting the MOSFET's operation.

8. Environmental Condition Consideration: Factor in environmental conditions that might affect the MOSFET, such as temperature and humidity.

In summary, the BSS123/LF1R N-channel MOSFET is a versatile and efficient component, particularly suited for digital logic switching and power management in portable devices. Its design focuses on low on-resistance and high-speed switching capabilities. Key considerations when incorporating this MOSFET into a circuit include gate voltage adequacy, thermal management, and circuit protection to ensure optimal performance and reliability.

BSS123/LF1R FAQ

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3. Are the BSS123/LF1R price and inventory displayed accurate?

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6. What is the process for return or replacement of BSS123/LF1R?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the BSS123/LF1R we delivered, we will accept the replacement or return of the BSS123/LF1R only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of BSS123/LF1R.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations