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ON Semiconductor BSS123-F169

Part No.:: BSS123-F169

Manufacturer:: ON Semiconductor

Package:: SOT-23-3

Datasheet:

Description:: MOSFET N-CH SOT23

In Stock:: 3630

Quantity:: Add To Cart

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BSS123-F169 Specifications

Packaging:
Tape & Reel (TR)
Series:
-
ProductStatus:
Obsolete
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
100 V
Current-ContinuousDrain(Id)@25°C:
170mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
4.5V, 10V
RdsOn(Max)@IdVgs:
6Ohm @ 170mA, 10V
Vgs(th)(Max)@Id:
2V @ 1mA
GateCharge(Qg)(Max)@Vgs:
2.5 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
73 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
360mW (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

BSS123-F169 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including BSS123-F169 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for BSS123-F169 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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BSS123-F169 information

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BSS123-F169 Typical application Circuitry

The BSS123-F169 is a specific version of the BSS123, which is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). This type of transistor is typically used for switching and amplifying electronic signals in various applications. The "-F169" suffix could refer to a specific packaging or manufacturing variant of the standard BSS123. MOSFETs like the BSS123 are known for their efficiency in handling high-speed switching and are widely used in electronic circuits.

Functional Role

N-Channel MOSFET: The BSS123-F169 functions as an N-channel MOSFET, ideal for applications requiring fast switching and signal amplification.

Application Scenarios

Digital Switching Circuits: Commonly used in digital circuits as a switch to control logic levels.

Power Management: Employed in power management systems in portable electronic devices, regulating power flow efficiently.

Key Parameters

Low On-Resistance: Features low on-resistance, enhancing efficiency, particularly in high-current applications.

High-Speed Switching Capability: Suitable for high-speed switching, making it ideal for digital and power management applications.

Circuit Example: Digital Logic Gate

Selected Application: Illustrating a circuit for a digital logic gate using the BSS123-F169.

Detailed Circuit Implementation

1. Power Source Connection: Connect a DC power source, such as 5V, appropriate for the digital logic level.

2. BSS123-F169 Integration: Implement the BSS123-F169 by connecting its drain pin (Pin 1) to the load (e.g., an LED).

3. Input Signal Configuration: Attach a digital input signal (like a microcontroller output) to the gate pin (Pin 2) for controlling the switching.

4. Grounding the Source: Connect the source pin (Pin 3) of the BSS123-F169 to the circuit ground.

5. Load and Protection Setup: Link the load (LED) to the drain and include a current-limiting resistor in series with the LED for protection.

Design Considerations

When designing circuits with the BSS123-F169, consider the following:

1. Gate Voltage Adequacy: Ensure the gate voltage is sufficient to fully activate the MOSFET for efficient operation.

2. Heat Dissipation: Though the BSS123 typically doesn't generate excessive heat, consider heat management in high-current scenarios.

3. Signal Integrity: Maintain signal integrity, crucial in high-frequency or digital applications.

4. Load Specification Matching: Ensure the MOSFET's current and voltage ratings match the load requirements.

5. Circuit Protection Strategies: Incorporate circuit protection like overcurrent protection for MOSFET and load safety.

6. Parasitic Capacitance Minimization: Design to reduce parasitic capacitance that could affect high-speed performance.

7. Stable Power Supply: Use a stable power supply to prevent performance-impacting fluctuations.

8. Environmental Condition Consideration: Account for environmental factors that could affect the MOSFET, such as temperature and humidity.

In summary, the BSS123-F169 N-channel MOSFET is a versatile and efficient component, particularly suited for digital logic switching and power management circuits. It is characterized by low on-resistance and high-speed switching capabilities. When integrating this MOSFET into a circuit, gate voltage adequacy, thermal management, and signal integrity are key considerations to ensure optimal performance and reliability.

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6. What is the process for return or replacement of BSS123-F169?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of BSS123-F169.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations