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Name: BSC190N15NS3GATMA1
Brand: Infineon Technologies
SKU: BSC190N15NS3GATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies BSC190N15NS3GATMA1

Part No.:: BSC190N15NS3GATMA1

Manufacturer:: Infineon Technologies

Package:: PG-TDSON-8-1

Datasheet:: BSC190N15NS3GATMA1.pdf

Description:: MOSFET N-CH 150V 50A TDSON-8-1

In Stock:: 2586

Quantity:: Add To Cart

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BSC190N15NS3GATMA1 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
OptiMOS™
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
150 V
Current-ContinuousDrain(Id)@25°C:
50A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
8V, 10V
RdsOn(Max)@IdVgs:
19mOhm @ 50A, 10V
Vgs(th)(Max)@Id:
4V @ 90µA
GateCharge(Qg)(Max)@Vgs:
31 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
2420 pF @ 75 V
FETFeature:
-
PowerDissipation(Max):
125W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

BSC190N15NS3GATMA1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including BSC190N15NS3GATMA1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for BSC190N15NS3GATMA1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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BSC190N15NS3GATMA1 information

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BSC190N15NS3GATMA1 Typical application Circuitry

BSC190N15NS3GATMA1

The BSC190N15NS3GATMA1 is a specialized semiconductor chip known as an N-channel MOSFET. This type of device is integral in various electronic applications due to its ability to efficiently control large currents and voltages. Let's explore its functionality, application scenarios, parameter characteristics, detailed circuit application, and design considerations.

Functional Characteristics

N-Channel MOSFET: The BSC190N15NS3GATMA1 is a type of N-channel MOSFET, which excels in switching and amplifying electronic signals, particularly in high-power scenarios.

Application Use-Cases

Power Conversion Systems: This MOSFET is frequently used in power conversion systems, such as in DC-DC converters, due to its high efficiency and ability to handle significant power levels.

Automotive Applications: It's also suitable for automotive applications, including electric vehicle power management systems, where reliability and efficiency are paramount.

Parameter Attributes

High Drain-Source Voltage: This MOSFET can withstand high drain-source voltages, making it ideal for high-voltage applications.

Enhanced Power Handling: It is characterized by its ability to handle high levels of power, crucial for applications involving substantial energy transfer.

Circuit Implementation: DC-DC Converter

Scenario Overview: We'll outline a circuit for a DC-DC converter using the BSC190N15NS3GATMA1 MOSFET.

Circuit Integration Steps

1. Input Voltage Connection: Connect the input voltage source (for example, 24V DC) to the circuit.

2. MOSFET Integration: Attach the drain of the BSC190N15NS3GATMA1 (Pin 1234) to the positive terminal of the input voltage.

3. Source Pin Grounding: Link the source pin of the MOSFET to the circuit ground.

4. Gate Drive Circuit: Connect a gate drive circuit to the gate of the MOSFET for controlling its operation.

5. Output Inductor: Place an inductor between the drain and the output filter capacitor to smooth the output voltage.

6. Feedback Mechanism: Implement a feedback network to regulate the output voltage.

Design Precautions

When designing with this MOSFET, consider these aspects:

1. Thermal Management: Implementing proper thermal management, such as heat sinks, is crucial due to the heat generated during operation.

2. Gate Control Precision: Ensuring precise control over the gate voltage is vital to optimize the MOSFET's performance and prevent damage.

3. Voltage Ratings Compliance: Adhere to the voltage ratings of the MOSFET to prevent overstressing the device.

4. Load Requirements Understanding: Comprehend the characteristics of the load to ensure the MOSFET can efficiently manage it.

5. Circuit Protection Measures: Include circuit protection measures like overvoltage and overcurrent protection to enhance circuit reliability.

6. Signal Integrity: Maintain signal integrity, especially in high-frequency applications, to prevent performance degradation.

7. Parasitic Elements Minimization: Minimize parasitic elements in the circuit layout to improve efficiency and reduce electromagnetic interference.

8. Feedback Network Tuning: Carefully tune the feedback network to achieve stable and accurate output voltage regulation.

In conclusion, the BSC190N15NS3GATMA1 MOSFET is a powerful component suited for high-voltage and high-power applications. Its efficient handling of power makes it an ideal choice for applications like power conversion systems and automotive electronics. Attention to detail in circuit design, especially concerning thermal management, gate control, and circuit protection, is critical to harnessing the full potential of this MOSFET.

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6. What is the process for return or replacement of BSC190N15NS3GATMA1?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of BSC190N15NS3GATMA1.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

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