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Name: BSC123N08NS3GATMA1
Brand: Infineon Technologies
SKU: BSC123N08NS3GATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Infineon Technologies BSC123N08NS3GATMA1

Part No.:: BSC123N08NS3GATMA1

Manufacturer:: Infineon Technologies

Package:: PG-TDSON-8-1

Datasheet:: BSC123N08NS3GATMA1.pdf

Description:: MOSFET N-CH 80V 11A/55A TDSON

In Stock:: 2713

Quantity:: Add To Cart

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BSC123N08NS3GATMA1 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
OptiMOS™
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
80 V
Current-ContinuousDrain(Id)@25°C:
11A (Ta), 55A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
6V, 10V
RdsOn(Max)@IdVgs:
12.3mOhm @ 33A, 10V
Vgs(th)(Max)@Id:
3.5V @ 33µA
GateCharge(Qg)(Max)@Vgs:
25 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
1870 pF @ 40 V
FETFeature:
-
PowerDissipation(Max):
2.5W (Ta), 66W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

BSC123N08NS3GATMA1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including BSC123N08NS3GATMA1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for BSC123N08NS3GATMA1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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BSC123N08NS3GATMA1 information

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BSC123N08NS3GATMA1 Typical application Circuitry

BSC123N08NS3GATMA1

The BSC123N08NS3GATMA1 is a specific type of semiconductor, namely an N-channel MOSFET. This device is essential in various electronic applications due to its efficiency in controlling and switching high currents.

Functional Role

High-Efficiency N-Channel MOSFET: The BSC123N08NS3GATMA1 is primarily used as a high-efficiency N-channel MOSFET, ideal for fast switching and power regulation in electronic circuits.

Application Scenarios

Energy Storage Systems: This MOSFET is well-suited for use in energy storage systems, where efficient power management is crucial.

Automotive Electronics: This technology is also widely used in the automotive sector, mainly in the electronic control modules of automobiles.

Parameter Details

Low On-State Resistance: The low on-state resistance of this MOSFET improves its efficiency in applications requiring high current.

Ability to handle high-speed switching: This is a property that is essential for contemporary electrical applications.

Circuit Example: Energy Storage System

Let's consider a circuit in an energy storage system using the BSC123N08NS3GATMA1 MOSFET.

Circuit Integration Guide

1. Voltage Source Connection: Begin by connecting a suitable voltage source to the circuit.

2. MOSFET Integration: Implement the BSC123N08NS3GATMA1 by attaching its drain (Pin 1234) to the negative terminal of the energy storage unit.

3. Source Pin Grounding: Connect the source pin of the MOSFET to the circuit ground.

4. Gate Voltage Application: Apply a controlled voltage to the gate pin of the MOSFET to regulate its switching behavior.

5. Load Connection: Attach the load (in this case, the energy storage unit) to the MOSFET.

6. Protective Components: Include components like a flyback diode to protect the MOSFET from potential voltage spikes.

Design Considerations

When designing circuits with this MOSFET, several factors need attention:

1. Optimal Heat Dissipation: Given the high-current applications, ensuring optimal heat dissipation is vital.

2. Precise Gate Voltage Regulation: Accurately regulating the gate voltage is essential to prevent damage to the MOSFET.

3. Load Characteristics Compatibility: Ensure that the MOSFET's specifications match the demands of the energy storage system.

4. Circuit Protection Strategies: Implement strategies to protect the circuit from overcurrent and electrostatic discharge.

5. Efficiency Maximization: Focus on maximizing the efficiency of the circuit, particularly in energy storage applications.

6. Minimizing Parasitic Capacitance: Design the circuit to minimize parasitic capacitance, which can affect the MOSFET's performance.

7. Signal Integrity Maintenance: Maintain signal integrity, especially in high-speed switching scenarios.

8. Environmental Factors Adaptation: Consider environmental factors like temperature and humidity that might affect the MOSFET's performance.

In summary, the BSC123N08NS3GATMA1 MOSFET serves as a pivotal component in modern electronic applications, notably in energy storage systems and automotive electronics. Its design emphasizes efficiency, high-speed operation, and compatibility with high-current applications. When integrating this MOSFET into a circuit, it's crucial to consider aspects like thermal management, gate voltage precision, and circuit protection to ensure optimal performance and longevity.

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6. What is the process for return or replacement of BSC123N08NS3GATMA1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the BSC123N08NS3GATMA1 we delivered, we will accept the replacement or return of the BSC123N08NS3GATMA1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of BSC123N08NS3GATMA1.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations