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Name: BSC098N10NS5ATMA1
Brand: Infineon Technologies
SKU: BSC098N10NS5ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies BSC098N10NS5ATMA1

Part No.:: BSC098N10NS5ATMA1

Manufacturer:: Infineon Technologies

Package:: PG-TDSON-8-7

Datasheet:: BSC098N10NS5ATMA1.pdf

Description:: MOSFET N-CH 100V 60A TDSON

In Stock:: 3196

Quantity:: Add To Cart

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BSC098N10NS5ATMA1 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
OptiMOS™
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
100 V
Current-ContinuousDrain(Id)@25°C:
60A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
6V, 10V
RdsOn(Max)@IdVgs:
9.8mOhm @ 30A, 10V
Vgs(th)(Max)@Id:
3.8V @ 36µA
GateCharge(Qg)(Max)@Vgs:
28 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
2100 pF @ 50 V
FETFeature:
-
PowerDissipation(Max):
2.5W (Ta), 69W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

BSC098N10NS5ATMA1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including BSC098N10NS5ATMA1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for BSC098N10NS5ATMA1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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BSC098N10NS5ATMA1 information

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BSC098N10NS5ATMA1 Typical application Circuitry

The BSC098N10NS5ATMA1 is a high-performance component from the OptiMOS™ N-channel MOSFET series, designed for exceptional power efficiency and density. This series is particularly recognized for its advancements in reducing on-resistance and optimizing switching performance, making it highly suitable for a wide range of applications, including power supply, charging circuits, and high-frequency switching power converters where efficiency is paramount.

1. Series Excellence: The OptiMOS™ series, which includes the BSC098N10NS5ATMA1, is acclaimed for integrating state-of-the-art technology to achieve low power losses and high reliability. These N-channel MOSFETs are optimized for fast switching, low gate charge, and minimal on-state resistance, contributing to superior efficiency in power conversion applications.

2. Pin Configuration (Source, Gate, Drain): The BSC098N10NS5ATMA1 is typically offered in a SuperSO8 package, which encompasses three critical terminals. The Source (S) terminal is connected to the circuit's ground or the lower potential reference point. The Gate (G) terminal is the control input, where a positive voltage relative to the Source turns the MOSFET on. The Drain (D) terminal is linked to the high potential side of the load or the circuit.

3. Effective Circuit Integration: To incorporate the BSC098N10NS5ATMA1 into a design, the Drain terminal is connected to the load, while the Source terminal is tied to the ground or negative side of the power supply. This setup enables the MOSFET to regulate the current flow to the load effectively when a suitable control voltage is applied to the Gate.

4. Driving the Gate: Activating the BSC098N10NS5ATMA1 involves applying a positive voltage to the Gate with respect to the Source. This gate drive voltage must surpass the device's threshold voltage to ensure it conducts, underlining the need for a precisely designed gate drive circuit capable of providing the appropriate voltage for consistent operation.

5. Incorporating Protection Features: Despite the robust design of the BSC098N10NS5ATMA1, adding protective elements such as gate resistors to control the gate charge and transient voltage suppressors (TVS) to guard against voltage spikes can further enhance the circuit's reliability and longevity.

6. Addressing Thermal Management: Given the BSC098N10NS5ATMA1's high power handling capability, managing the thermal load is essential. This may involve using heat sinks, designing the PCB for efficient heat dissipation with thermal vias, and ensuring adequate air flow to maintain the MOSFET within its operational temperature range.

Employing the BSC098N10NS5ATMA1 in electronic designs ensures high-efficiency power management, making it a valuable asset in applications demanding optimal performance and reliability. Its advanced features and superior design within the OptiMOS™ series make it an essential component for modern power electronics, driving advancements in energy conversion and management systems.

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6. What is the process for return or replacement of BSC098N10NS5ATMA1?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of BSC098N10NS5ATMA1.

(3)The PartNo is unused and only in the original unpacked packaging.

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