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Name: BSC040N10NS5SCATMA1
Brand: Infineon Technologies
SKU: BSC040N10NS5SCATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Infineon Technologies BSC040N10NS5SCATMA1

Part No.:: BSC040N10NS5SCATMA1

Manufacturer:: Infineon Technologies

Package:: PG-WSON-8-2

Datasheet:: BSC040N10NS5SCATMA1.pdf

Description:: MOSFET N-CH 100V 140A WSON-8

In Stock:: 10642

Quantity:: Add To Cart

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BSC040N10NS5SCATMA1 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
OptiMOS™ 5
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
100 V
Current-ContinuousDrain(Id)@25°C:
140A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
6V, 10V
RdsOn(Max)@IdVgs:
4mOhm @ 50A, 10V
Vgs(th)(Max)@Id:
3.8V @ 95µA
GateCharge(Qg)(Max)@Vgs:
72 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
5300 pF @ 50 V
FETFeature:
-
PowerDissipation(Max):
3W (Ta), 167W (Tc)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Surface Mount

BSC040N10NS5SCATMA1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including BSC040N10NS5SCATMA1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for BSC040N10NS5SCATMA1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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BSC040N10NS5SCATMA1 information

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BSC040N10NS5SCATMA1 Typical application Circuitry

BSC040N10NS5SCATMA1

The BSC040N10NS5SCATMA1 is a specific model of a MOSFET transistor, designed for high efficiency and performance in various electronic applications. MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are crucial components in the world of electronics, enabling the control of high power with low input power, acting essentially as voltage-controlled switches.

Applications Scenarios

The BSC040N10NS5SCATMA1 is suited for a wide range of applications including but not limited to power supply units, DC-DC converters, motor drives, and switching applications where efficiency and reliability are critical.For high-performance power management duties, its fast switching speed, low on-resistance, and high current capabilities make it the perfect option.

Parameters and Features

This MOSFET is characterized by its low on-resistance, high switching speed, and the ability to handle significant power levels. Specific parameters include:

- Drain-Source Voltage (Vds): The maximum voltage that can be applied from drain to source.

- Continuous Drain Current (Id): The maximum current the MOSFET can conduct from drain to source continuously.

- The Maximum voltage that can be placed between the gate and source terminals is known as the gate-source voltage (Vgs).

- Rds(on): When a MOSFET is turned on, the on-state resistance between the drain and source terminals affects the device's efficiency and power dissipation.

Application Scenario: Designing a DC-DC Converter

In a DC-DC converter application, the BSC040N10NS5SCATMA1 can be utilized in a synchronous buck converter topology to efficiently step down voltage. Here's a detailed connection method:

- Input Capacitor Connection: An input capacitor should be connected close to the drain of the BSC040N10NS5SCATMA1 to filter the input supply and reduce ripple.

- Bootstrap Capacitor and Diode: For the high-side MOSFET, a bootstrap capacitor and diode are essential. The anode of the diode is connected to the supply voltage, while the cathode is connected to the bootstrap capacitor and the high-side driver's bootstrap pin. This setup provides the necessary gate drive voltage.

- Gate Drive Circuitry: The gate of BSC040N10NS5SCATMA1 is connected to a gate driver circuit. This driver controls the turning on and off of the MOSFET, requiring a gate drive voltage higher than the source voltage to fully turn on the MOSFET in a high-side application.

- Output Inductor and Capacitor: An inductor is connected to the drain, and an output capacitor is connected from the output voltage node (after the inductor) to ground. In order to provide a consistent output, these parts filter the output voltage and lessen ripple.

- Pull-down Resistor: A pull-down resistor might be connected between the gate and source of the BSC040N10NS5SCATMA1 to ensure it remains off when not actively driven by the gate driver.

Design Considerations

When designing circuits with the BSC040N10NS5SCATMA1, several factors must be considered:

- Thermal Management: Ensure proper heat dissipation methods are employed, as high currents and switching operations generate heat.

- Gate Drive Voltage: Adequate gate drive voltage is crucial to fully turn on the MOSFET, reducing on-resistance and minimizing power loss.

- Switching Frequency: Higher switching frequencies can improve efficiency and reduce the size of passive components but may increase switching losses.

- Parasitic Inductances: Minimize layout parasitics to reduce voltage spikes during switching transitions, which can affect performance and reliability.

Utilizing BSC040N10NS5SCATMA1 in a DC-DC converter design involves careful consideration of these parameters and circuit configurations to achieve the desired efficiency, performance, and reliability.

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of BSC040N10NS5SCATMA1.

(3)The PartNo is unused and only in the original unpacked packaging.

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