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Name: BSC016N06NSATMA1
Brand: Infineon Technologies
SKU: BSC016N06NSATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies BSC016N06NSATMA1

Part No.:: BSC016N06NSATMA1

Manufacturer:: Infineon Technologies

Package:: PG-TDSON-8 FL

Datasheet:: BSC016N06NSATMA1.pdf

Description:: MOSFET N-CH 60V 30A/100A TDSON

In Stock:: 3941

Quantity:: Add To Cart

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BSC016N06NSATMA1 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
OptiMOS™
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
60 V
Current-ContinuousDrain(Id)@25°C:
30A (Ta), 100A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
6V, 10V
RdsOn(Max)@IdVgs:
1.6mOhm @ 50A, 10V
Vgs(th)(Max)@Id:
2.8V @ 95µA
GateCharge(Qg)(Max)@Vgs:
71 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
5200 pF @ 30 V
FETFeature:
-
PowerDissipation(Max):
2.5W (Ta), 139W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

BSC016N06NSATMA1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including BSC016N06NSATMA1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for BSC016N06NSATMA1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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BSC016N06NSATMA1 information

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BSC016N06NSATMA1 Typical application Circuitry

BSC016N06NSATMA1

The BSC016N06NSATMA1 is an N-channel power MOSFET produced by Infineon Technologies. It is designed for efficient power conversion and switching in various applications, characterized by its high current capacity, low on-resistance, and rapid switching abilities.

BSC016N06NSATMA1: Functional Attributes and Applications

Specific Applications

- Electric vehicle (EV) charging stations: Used in the infrastructure for EV charging in order to manage power efficiently.

Important Details

- Low Rds(on): This feature boosts efficiency and lowers power loss.

- High Current Handling: Able to handle large currents, which is necessary in situations requiring a lot of power.

- Quick Switching Speed: Guarantees effective operation in applications that call for rapid transitions.

- Dependability in Compact Design: Perfect for applications requiring high power density yet with limited space.

Circuit Design: BSC016N06NSATMA1 in an EV Charging Station

1. Implementing MOSFET in the Charging Circuit

- Gate (Pin 1): Connect to the control unit (like a microcontroller) for operational switching.

- Drain (Pin 2): Interface with the charging circuit's higher potential side.

2. Source Pin Connection and Grounding Setup

- Source (Pin 3): Link to the circuit's ground, providing a stable operation reference.

3. Detailed Gate Drive and Protection Configuration

- Gate Drive Mechanism: Incorporate a dedicated driver to supply the required gate voltage.

- Protective Measures: Utilize resistors and diodes for controlling inrush current and protecting against voltage spikes.

Advanced Design Considerations

- Effective Thermal Management: Plan for heat dissipation, especially crucial due to the high-power operation.

- Precision in Gate Driving: Ensure accurate control of the gate drive to facilitate efficient MOSFET operation.

- Optimized PCB Layout for High Current: Design the PCB to efficiently handle high current paths and minimize losses.

- Balancing Switching Frequency: Adjust the frequency for optimal efficiency and minimal thermal stress.

- Load Analysis for Compatibility: Assess the load characteristics specific to EV charging systems.

- Comprehensive Circuit Protection: Implement protection against overcurrent, overvoltage, and thermal overload.

- EMI Reduction Strategies: Focus on minimizing electromagnetic interference in the design.

- Adherence to Safety Standards: Ensure compliance with automotive and electrical industry standards.

Integrating the BSC016N06NSATMA1 into an EV charging station circuit requires a deep understanding of these design principles to ensure efficient, reliable, and safe operation. For complete specifications and application guidelines, refer to the BSC016N06NSATMA1's datasheet and Infineon's technical resources.

BSC016N06NSATMA1 FAQ

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3. Are the BSC016N06NSATMA1 price and inventory displayed accurate?

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6. What is the process for return or replacement of BSC016N06NSATMA1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the BSC016N06NSATMA1 we delivered, we will accept the replacement or return of the BSC016N06NSATMA1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of BSC016N06NSATMA1.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations