BSC011N03LSIATMA1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including BSC011N03LSIATMA1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for BSC011N03LSIATMA1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.
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Versatile Applications:
1. Switch Mode Power Supplies (SMPS): The BSC011N03LSIATMA1 is a prime choice for SMPS circuits, providing efficient voltage regulation and power conversion.
2. Electronic Speed Controllers (ESC): It is widely used in ESCs for electric vehicles and drones, ensuring precise motor speed control and energy efficiency.
3. Power Distribution Systems: The BSC011N03LSIATMA1 MOSFET is employed in power distribution systems for electronic devices, offering reliable load switching and management.
Key Specifications:
- Drain-Source Voltage (Vds): It can handle up to 30V, allowing for versatile use in various operating environments.
- Gate-Source Voltage (Vgs): Rated for up to ±20V, compatible with diverse control circuitries.
- Continuous Drain Current (Id): Capable of supporting a robust continuous drain current of up to 100A.
- On-Resistance (Rds(on)): Features minimal resistance, as low as 1.1mΩ at Vgs = 10V, ensuring efficient conduction and reduced power loss.
Example Circuit - Efficient LED Street Lighting System:
1. Power Source Connection: Connect the positive terminal of a 24V power source to the drain (D) pin of the BSC011N03LSIATMA1.
2. LED Array Load: Connect an array of high-power LEDs in series with a current-limiting resistor to the source (S) pin of the MOSFET.
3. Lighting Control Signal: Apply a PWM signal from a microcontroller or a light sensor to the gate (G) pin to adjust the LED brightness based on ambient light conditions.
4. Grounding Strategy: Ensure that the ground of the power source, the microcontroller, and the source (S) pin of the MOSFET are all connected for a stable reference.
Circuit Design Considerations:
- Gate Drive Optimization: It's essential to provide a gate drive voltage that adequately turns on the MOSFET while remaining within its gate-source voltage limits.
- Thermal Management: Implement robust heat dissipation measures, such as using a heatsink, particularly when the MOSFET is operating under high-current conditions or in a high-temperature environment.
- Protection Mechanisms: Introduce protective components like a gate resistor to limit gate current and a diode to protect against voltage transients in inductive loads.
In summary, the BSC011N03LSIATMA1 MOSFET is a crucial component in contemporary electronic designs, offering a harmonious blend of low on-resistance and high current handling capability. When designing circuits with this MOSFET, it's vital to focus on gate voltage precision, effective thermal management, and incorporating protective measures to ensure reliable and efficient operation.
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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.
(2)We are informed of the defect described above within 90 days after the delivery of BSC011N03LSIATMA1.
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