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Name: 2SK3018T106
Brand: Rohm Semiconductor
SKU: 2SK3018T106
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Rohm Semiconductor 2SK3018T106

Part No.:: 2SK3018T106

Manufacturer:: Rohm Semiconductor

Package:: UMT3

Datasheet:: 2SK3018T106.pdf

Description:: MOSFET N-CH 30V 100MA UMT3

In Stock:: 51460

Quantity:: Add To Cart

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2SK3018T106 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
-
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
30 V
Current-ContinuousDrain(Id)@25°C:
100mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
2.5V, 4V
RdsOn(Max)@IdVgs:
8Ohm @ 10mA, 4V
Vgs(th)(Max)@Id:
1.5V @ 100µA
GateCharge(Qg)(Max)@Vgs:
-
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
13 pF @ 5 V
FETFeature:
-
PowerDissipation(Max):
200mW (Ta)
OperatingTemperature:
150°C (TJ)
MountingType:
Surface Mount

2SK3018T106 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including 2SK3018T106 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for 2SK3018T106 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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2SK3018T106 information

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2SK3018T106 Typical application Circuitry

The 2SK3018T106 is a part of a series of N-channel MOSFET transistors, devices known for their efficiency and reliability in switching applications. This particular model is recognized for its compact size and low on-resistance, making it an excellent choice for power management applications where space is at a premium and efficiency is paramount. The 2SK3018T106 is commonly utilized in load switch applications, power management circuits, and as a switch for various digital signals. Its characteristics include a low gate threshold voltage, making it suitable for low-voltage operations, which is a significant advantage in battery-powered devices and low-voltage digital circuits.

1. Voltage Specifications: The 2SK3018T106 operates efficiently across a range of voltages, with a maximum drain-source voltage (V_DS) typically around 30V, and a gate-source voltage (V_GS) that should not exceed ±20V. Its low gate threshold voltage (V_GS(th)) allows it to be easily controlled by logic-level voltages, which is particularly useful in low-power and low-voltage applications.

2. Pin Configuration: The Drain (D), Gate (G), and Source (S) pins are the three that make up the device. It is packaged in a tiny SOT-23 box. The Drain pin is connected to the load, the Gate pin receives the control voltage that switches the device on and off, and the Source pin is connected to the ground or the lower potential side of the circuit. Proper pin identification and connection are crucial for ensuring that the 2SK3018T106 functions correctly within the circuit.

3. Circuit Integration: Integrating the 2SK3018T106 into a circuit involves connecting the Gate pin to a control signal, which can be derived from a microcontroller or another logic device. This signal will regulate the on/off state of the MOSFET. While one of the load's terminals is connected to the power supply, the other terminal should be linked to the drain pin. There is a ground connection made to the Source pin. It is also advisable to use a pull-down resistor on the Gate to ensure that the MOSFET remains off when there is no control signal present.

4. Protection Features: Although the 2SK3018T106 is designed for reliability, adding protection components can enhance its longevity and stability. A gate resistor can be added to limit the inrush current to the gate and a flyback diode across the load can protect the MOSFET from potential voltage spikes caused by inductive loads.

5. Thermal Management: Despite its efficiency, the 2SK3018T106 can generate heat during operation, especially when driving significant currents or when switched at high frequencies. Therefore, it might be necessary to consider thermal management solutions, such as ensuring adequate airflow around the device or using a printed circuit board (PCB) with a good thermal design to help dissipate heat.

6. Usage Considerations: When designing circuits with the 2SK3018T106, it is important to consider the device's maximum ratings for current and power dissipation to avoid exceeding these limits, which could lead to device failure. The selection of appropriate components that complement the MOSFET's operations, like resistors and diodes, should match the intended application's voltage and current requirements.

Incorporating the 2SK3018T106 into a digital or power management system necessitates careful consideration of its voltage specifications, pin configuration, and integration into the circuit, alongside protective measures to ensure reliability and longevity. The 2SK3018T106 exemplifies the capabilities of N-channel MOSFETs in offering efficient, low-voltage switching solutions for a wide range of electronic applications, highlighting its versatility and importance in modern electronic designs.

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of 2SK3018T106.

(3)The PartNo is unused and only in the original unpacked packaging.

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