What is the Additional Feature ?

Name: 2N7002WT1G
Brand: ON Semiconductor
SKU: 2N7002WT1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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ON Semiconductor 2N7002WT1G

Part No.:: 2N7002WT1G

Manufacturer:: ON Semiconductor

Package:: SC-70-3 (SOT323)

Datasheet:: 2N7002WT1G.pdf

Description:: MOSFET N-CH 60V 310MA SC70-3

In Stock:: 2131

Quantity:: Add To Cart

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2N7002WT1G Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk
Series:
-
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
60 V
Current-ContinuousDrain(Id)@25°C:
310mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
4.5V, 10V
RdsOn(Max)@IdVgs:
1.6Ohm @ 500mA, 10V
Vgs(th)(Max)@Id:
2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs:
0.7 nC @ 4.5 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
24.5 pF @ 20 V
FETFeature:
-
PowerDissipation(Max):
280mW (Tj)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

2N7002WT1G this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including 2N7002WT1G price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for 2N7002WT1G to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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2N7002WT1G information

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2N7002WT1G Typical application Circuitry

2N7002WT1G

The 2N7002WT1G is a member of the family of N-channel enhancement-mode Field-Effect Transistors (FETs), specifically designed for high-speed switching applications. This component is widely recognized for its high efficiency and low voltage operation, making it an ideal choice for power management tasks in compact electronic devices. The 2N7002WT1G is particularly notable for its small footprint and low on-resistance, which facilitate its integration into space-constrained applications while maintaining high performance. This MOSFET is commonly deployed in load switching, power conversion, and various digital control circuits, where its fast switching speed and efficiency are crucial.

1. Voltage Specifications: The 2N7002WT1G operates effectively within a drain-source voltage (V_DS) up to 60V, and a gate-source voltage (V_GS) tolerance of ±20V. It is designed for low threshold voltage operation, with a typical gate threshold voltage (V_GS(th)) allowing for control with low voltage logic signals, which is advantageous in battery-operated circuits and low-power applications.

2. Pin Configuration and Connectivity: Housed in a small SOT-323 package, the 2N7002WT1G features three pins: Gate (G), Drain (D), and Source (S). For proper integration into a circuit, the Gate pin is where the control voltage is applied to switch the transistor on or off. The Drain pin is connected to the high potential side of the load or circuit it controls, and the Source pin is connected to the circuit's ground or the low potential side. Correct identification and connection of these pins are imperative for the MOSFET to function as intended.

3. Circuit Integration Guidelines: To integrate the 2N7002WT1G into a circuit, the Gate pin should be driven by a voltage that toggles between a high level (to turn the MOSFET on) and a low level (to turn it off). A resistor may be placed between the Gate and the driving signal to limit the gate current and protect the device. The Drain pin is connected to the load, which could be a motor, LED, or other components requiring control. It is necessary to connect the Source pin to ground. A pull-down resistor at the gate is also advised in order to guarantee that the MOSFET stays off in the absence of a control signal.

4. Protection and Reliability: Incorporating protective elements such as a diode across inductive loads can safeguard the 2N7002WT1G from voltage spikes, which are common when switching inductive loads. Additionally, considering thermal aspects is important, as power dissipation in the device can lead to heating; thus, ensuring good thermal management in the circuit design is essential.

5. Operating Considerations: When designing circuits with the 2N7002WT1G, it's crucial to stay within its maximum ratings for drain current and power dissipation to prevent damage. Ensuring that the gate drive voltage does not exceed the maximum V_GS rating is also essential to avoid damaging the gate oxide layer.

6. Application Flexibility: The 2N7002WT1G's specifications allow it to be used in a wide range of applications, from simple switching tasks to more complex power management systems. Its high-speed switching capability and low on-resistance mean it can efficiently handle power conversion tasks, contributing to the overall energy efficiency of the system.

The 2N7002WT1G exemplifies the versatility and efficiency of N-channel MOSFETs in modern electronic design, offering a compact and efficient solution for high-speed switching and power management applications. By adhering to the guidelines for voltage specifications, pin configuration, and circuit integration, designers can leverage this device to enhance the performance and reliability of their electronic systems.

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6. What is the process for return or replacement of 2N7002WT1G?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of 2N7002WT1G.

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