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Name: 2N7002PW,115
Brand: Nexperia USA Inc.
SKU: 2N7002PW,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Nexperia USA Inc. 2N7002PW,115

Part No.:: 2N7002PW,115

Manufacturer:: Nexperia USA Inc.

Package:: SOT-323

Datasheet:: 2N7002PW,115.pdf

Description:: MOSFET N-CH 60V 310MA SOT323

In Stock:: 2802

Quantity:: Add To Cart

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2N7002PW,115 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
-
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
60 V
Current-ContinuousDrain(Id)@25°C:
310mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
1.6Ohm @ 500mA, 10V
Vgs(th)(Max)@Id:
2.4V @ 250µA
GateCharge(Qg)(Max)@Vgs:
0.8 nC @ 4.5 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
50 pF @ 10 V
FETFeature:
-
PowerDissipation(Max):
260mW (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

2N7002PW,115 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including 2N7002PW,115 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for 2N7002PW,115 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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2N7002PW,115 information

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2N7002PW,115 Typical application Circuitry

2N7002PW,115

The 2N7002PW,115 is an N-channel enhancement mode field-effect transistor (FET), which belongs to the vast family of MOSFETs. This type of component plays a critical role in the realm of electronic designs due to its versatile application range.

Functionality of 2N7002PW,115:

The 2N7002PW,115 functions essentially as an electrical switch or an amplifier. This MOSFET has a switchable gate voltage that controls whether current can flow between its drain and source.

Popular Application Scenarios:

1. Digital logic switches.

2. Conversion circuits for logic levels.

3. Power management and DC-DC converters.

4. Low-power applications due to its efficient operation.

5. Amplification of small signals in analog scenarios.

Key Features of the 2N7002PW,115:

1. Voltage Rating (VDS): Generally around 60V, this represents the maximum potential difference that can be maintained between the drain and source without risk.

2. Gate Threshold Voltage (VGS(th)): Ranging between 1V to 2.5V, it symbolizes the voltage at which the 2N7002PW,115 starts conducting.

3. Continuous Drain Current (ID): Denotes the maximum steady-state current the component can handle.

4. Resistance when ON (RDSon): It implies minimal resistance, ensuring efficient operation when the MOSFET is active.

Example Application: Power Management in Low-power Devices

Goal:

Use the 2N7002PW,115 to manage power for a low-power sensor, thereby extending battery life.

Components Required:

1. 2N7002PW,115 MOSFET.

2. Low-power sensor.

3. Battery or DC power source.

4. Digital control from a microcontroller.

5. Decoupling capacitor (e.g., 0.1μF).

Designing the Circuit:

1. Drain Connection: Link the sensor's power input directly to the 2N7002PW,115 drain.

2. Source Connection: Connect the source to the power supply's ground or negative terminal.

3. Gate Control: Connect the gate to the microcontroller's output pin, ensuring the 2N7002PW,115 can be turned ON/OFF by the microcontroller.

4. Decoupling Capacitor: Fix this capacitor between the sensor's power input and ground to filter any potential voltage spikes or noise.

5. Powering On/Off: When the microcontroller sends a HIGH signal, the 2N7002PW,115 will activate, powering the sensor. Conversely, a LOW signal deactivates the sensor, conserving power.

Design Considerations:

1. Gate Voltage: Ensure the microcontroller's output voltage matches the required gate voltage for the 2N7002PW,115.

2. Heat Production: Always monitor the 2N7002PW,115 temperature. In high-current scenarios, a heat sink might be necessary.

3. Source-Drain Current: Confirm that the sensor's current consumption doesn't exceed the MOSFET's continuous drain current specification.

4. Switching Speed: If the sensor requires frequent power cycling, make sure the 2N7002PW,115 can handle the switching frequency.

To sum up, the 2N7002PW,115 exhibits the dynamism and efficiency that is typical of N-channel MOSFETs. When integrated correctly, taking into account its specifications, it can significantly enhance an electronic design's efficacy and reliability.

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6. What is the process for return or replacement of 2N7002PW,115?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the 2N7002PW,115 we delivered, we will accept the replacement or return of the 2N7002PW,115 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of 2N7002PW,115.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations