What is the Additional Feature ?

Name: 2N7002LT1G
Brand: onsemi
SKU: 2N7002LT1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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onsemi 2N7002LT1G

Part No.:: 2N7002LT1G

Manufacturer:: onsemi

Package:: SOT-23-3 (TO-236)

Datasheet:: 2N7002LT1G.pdf

Description:: MOSFET N-CH 60V 115MA SOT23-3

In Stock:: 653657

Quantity:: Add To Cart

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2N7002LT1G Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
-
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
60 V
Current-ContinuousDrain(Id)@25°C:
115mA (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
5V, 10V
RdsOn(Max)@IdVgs:
7.5Ohm @ 500mA, 10V
Vgs(th)(Max)@Id:
2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs:
-
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
50 pF @ 25 V
FETFeature:
-
PowerDissipation(Max):
225mW (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

2N7002LT1G this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including 2N7002LT1G price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for 2N7002LT1G to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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2N7002LT1G information

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2N7002LT1G Typical application Circuitry

2N7002LT1G

The 2N7002LT1G is an N-channel enhancement-mode Field-Effect Transistor (FET), often used as a switch in a variety of electronic circuits due to its efficiency and compactness.

Functions of 2N7002LT1G:

The 2N7002LT1G is primarily employed as:

- An efficient electronic switch.

- An amplifier in specific signal enhancement scenarios.

- A device to control other parts in circuits due to its rapid response.

Application Scenarios:

The 2N7002LT1G can be found in a myriad of applications, including:

- DC/DC Converters.

- Relay replacements.

- Motor control circuits.

- Load switching.

Characteristics of the 2N7002LT1G:

- It's an N-Channel MOSFET.

- A drain-source voltage (VDS) typically rated at around 60V.

- Continuous drain current (ID) is approximately 300mA.

- Comes with a low on-state resistance (RDS(on)).

- Encased in an SOT-23 package, suitable for space-saving applications.

Application Example: Relay Replacement

1.Connecting the Drain: Hook up the Drain terminal (commonly marked 'D') of the 2N7002LT1G to one terminal of the device you're aiming to control. The device's other terminal needs to be connected directly to the power source's positive side.

2.Setting up the Source: The Source pin, usually represented as 'S', should be grounded, linking it directly to the circuit's common ground or negative terminal.

3.Managing the Gate: The Gate terminal, often tagged as 'G', steers the operation of the 2N7002LT1G. By introducing a voltage (ensuring it's above the threshold voltage but not exceeding the maximum VGS), you'll turn the transistor on. Conversely, nullify this voltage or connect the gate to the ground to turn it off.

4.Integration with Logic Circuit: For digitally managed operations, connect the Gate of the 2N7002LT1G to a digital logic circuit or microcontroller. This can dictate when the transistor should activate, thereby managing power to the attached device.

Design Considerations:

- Gate Protection: Integrate a pull-down resistor with the 2N7002LT1G gate to ensure it remains off by default. This is vital when there's no signal from the controlling logic.

- Handling Voltage: Ensure that the voltage applied to the gate aligns with the transistor's specifications, avoiding excesses that could compromise its integrity.

- Heat Concerns: Even if 2N7002LT1G is deemed efficient, it's still prone to heating, especially with high loads. It's prudent to ensure good heat dissipation.

- Avoiding Back EMF: In scenarios where inductive loads are involved, like motors, implement a diode to counter potential back EMF, which can be harmful.

In conclusion, the 2N7002LT1G MOSFET proves to be a trustworthy and adaptable electronic component. However, for its optimal performance, it's pivotal to embed it in circuits with due diligence, taking note of the outlined considerations.

2N7002LT1G FAQ

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We have a professional and experienced quality control team to strictly verify and test the 2N7002LT1G. All suppliers must pass our qualification reviews before they can publish their products including 2N7002LT1G on icwhale.com; we pay more attention to the channels and quality of 2N7002LT1G products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the 2N7002LT1G price and inventory displayed accurate?

The price and inventory of 2N7002LT1G fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

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6. What is the process for return or replacement of 2N7002LT1G?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the 2N7002LT1G we delivered, we will accept the replacement or return of the 2N7002LT1G only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of 2N7002LT1G.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations