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Name: SQJQ910EL-T1_GE3
Brand: Vishay Siliconix
SKU: SQJQ910EL-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Vishay Siliconix SQJQ910EL-T1_GE3

Part No.:: SQJQ910EL-T1_GE3

Manufacturer:: Vishay Siliconix

Package:: PowerPAK® 8 x 8 Dual

Datasheet:: SQJQ910EL-T1_GE3.pdf

Description:: MOSFET 2 N-CH 100V POWERPAK8X8

In Stock:: 3343

Quantity:: Add To Cart

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SQJQ910EL-T1_GE3 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
Automotive, AEC-Q101, TrenchFET®
ProductStatus:
Active
FETType:
2 N-Channel (Dual)
FETFeature:
Standard
DraintoSourceVoltage(Vdss):
100V
Current-ContinuousDrain(Id)@25°C:
70A (Tc)
RdsOn(Max)@IdVgs:
8.6mOhm @ 10A, 10V
Vgs(th)(Max)@Id:
2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs:
58nC @ 10V
InputCapacitance(Ciss)(Max)@Vds:
2832pF @ 50V
Power-Max:
187W
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Surface Mount

SQJQ910EL-T1_GE3 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including SQJQ910EL-T1_GE3 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for SQJQ910EL-T1_GE3 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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SQJQ910EL-T1_GE3 information

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SQJQ910EL-T1_GE3 Typical application Circuitry

SQJQ910EL-T1_GE3

The SQJQ910EL-T1_GE3 is a Dual N-Channel 30 V (D-S) MOSFET designed and produced by Vishay. As part of the MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) family, it is a voltage-controlled device predominantly employed in the amplification or switching of electronic signals.

Key Characteristics of SQJQ910EL-T1_GE3: The SQJQ910EL-T1_GE3 offers a plethora of standout features. Capable of accommodating continuous drain currents of up to 13.5 A and pulsed drain currents of up to 54 A, it is resilient enough for numerous power applications. The MOSFET operates at a relatively low threshold voltage between 1 V and 2.5 V and presents a maximum drain-source resistance of 7.8 mOhm when fully activated. The comparatively low on-resistance results in less power loss and enhanced efficiency.

Application Scenarios: The SQJQ910EL-T1_GE3 MOSFET is widely utilized in power management applications, including battery management systems, power supply circuits, motor control, and more. It shines particularly in contexts where high-speed switching and energy efficiency are vital.

Circuit Design

For instance, let's consider the SQJQ910EL-T1_GE3 deployed as a motor controller:

1. Drain Terminal: Connect the drain terminal of the SQJQ910EL-T1_GE3 (pin 3 and pin 6) to one terminal of the motor.

2. Source Terminal: Attach the source terminal (pin 2 and pin 5) to the ground of the power supply.

3. Gate Terminal: The gate terminal (pin 1 and pin 4) controls the switch. When a voltage equal to the power supply voltage is supplied to the gate, the SQJQ910EL-T1_GE3 switches on, causing the motor to spin. Conversely, when the gate voltage is near the ground, the MOSFET switches off, halting the motor.

4. Motor Control: To turn the motor on, a high voltage (near the supply voltage) should be applied to the gate. To stop the motor, a low voltage (near the ground) should be applied.

Design Considerations

When devising circuits with the SQJQ910EL-T1_GE3, several factors should be considered:

- Gate Voltage: Ensure the gate voltage does not exceed the maximum ±20 V to avoid damage to the gate oxide layer.

- Heat Dissipation: As with any power component, the SQJQ910EL-T1_GE3 may produce heat when operating. Proper cooling methods must be implemented to prevent overheating.

- ESD Protection: MOSFETs are sensitive to electrostatic discharge (ESD). ESD damage must be prevented using precautions.

To summarize, the SQJQ910EL-T1_GE3 is a powerful dual N-Channel MOSFET with broad application in power management and beyond. Given its performance parameters, it is crucial to follow sound design principles to maximize its potential and ensure its long-term reliability.

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6. What is the process for return or replacement of SQJQ910EL-T1_GE3?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the SQJQ910EL-T1_GE3 we delivered, we will accept the replacement or return of the SQJQ910EL-T1_GE3 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of SQJQ910EL-T1_GE3.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations