IRF7307TRPBF

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Infineon Technologies IRF7307TRPBF

Part No.:
IRF7307TRPBF
Manufacturer:
Infineon Technologies
Package:
8-SOIC (0.154, 3.90mm Width)
Datasheet:
IRF7307TRPBF.pdf
Description:
MOSFET N/P-CH 20V 8-SOIC
In Stock:
877
Quantity:
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  • Purchase and inquiryPurchase and inquiry

    IRF7307TRPBF this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRF7307TRPBF price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRF7307TRPBF to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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    IRF7307TRPBF Typical application Circuitry

    IRF7307TRPBF

    The IRF7307TRPBF is a dual MOSFET device from Infineon Technologies, featuring both P-channel and N-channel MOSFETs in a single SO-8 package. This integration facilitates compact and efficient designs in applications requiring complementary drive or half-bridge configurations. The device is well-suited for power management tasks in portable electronics, DC-DC converters, and motor control circuits, among others.

    Application Scenarios

    The IRF7307TRPBF is commonly used in applications such as load switching, power management in portable devices, and as part of the switching elements in DC-DC converters. Its dual MOSFET configuration makes it particularly useful in space-constrained environments where efficient power conversion and control are necessary.

    Parameter Features

    Key features of the IRF7307TRPBF include:

    - Drain-Source Voltage (Vds): The device supports different voltage levels for the P-channel and N-channel MOSFETs, suitable for various power applications.

    - Continuous Drain Current (Id): It offers high current handling capabilities for both MOSFETs, allowing for significant power switching.

    - Rds(on): Exhibits low on-state resistance for both channels, minimizing power losses and improving efficiency.

    - Package: The SO-8 package allows for a compact footprint, beneficial in space-limited applications.

    Circuit Connection Example: Synchronous Buck Converter

    In a synchronous buck converter, the IRF7307TRPBF can be used for the high-side (P-channel) and low-side (N-channel) switching elements.

    1. High-Side (P-Channel) MOSFET Connection:

    - Gate: Connect the gate of the P-channel MOSFET (pin 5) to a gate driver that pulls the voltage below the source voltage to turn on the MOSFET.

    - Drain: Attach the drain (pin 6) to the input voltage supply. This will be the point where the input voltage is switched.

    - Source: Link the source (pin 8) to the output inductor leading to the load.

    2. Low-Side (N-Channel) MOSFET Connection:

    - Gate: Connect the gate of the N-channel MOSFET (pin 1) to another output of the gate driver, ensuring it can be driven high relative to the source to turn on the MOSFET.

    - Drain: Connect the drain (pin 2) to the same node as the P-channel source, forming the switching node of the buck converter.

    - Source: Link the source (pin 3) to the ground, completing the path for the low-side switch.

    3. Bootstrap Circuit for High-Side Drive: Include a bootstrap diode and capacitor between the low-side source and the high-side gate to provide a floating supply for the high-side gate driver, ensuring it can drive the gate above the source voltage.

    4. Output Filtering: Use an LC filter (inductor connected between the switching node and output, and a capacitor from the output to ground) to smooth the output voltage.

    Design Considerations

    When designing with the IRF7307TRPBF, several factors need careful consideration:

    - Gate Drive Voltages: Ensure appropriate gate drive voltages for both the P-channel and N-channel MOSFETs. The P-channel requires a gate voltage lower than the source to turn on, while the N-channel needs a gate voltage higher than the source.

    - Thermal Management: Despite the IRF7307TRPBF's efficiency, power dissipation can still lead to significant heating. Proper thermal management, including heatsinking and airflow, may be necessary.

    - Dead Time Control: Implement dead time between the high-side and low-side switches to prevent shoot-through, which can occur if both MOSFETs are on simultaneously.

    - Layout Considerations: Minimize the loop area to reduce inductance and switching noise. Pay particular attention to the layout of high-current paths and the gate drive circuit to minimize interference and losses.

    By integrating these design principles, the IRF7307TRPBF can be effectively utilized in synchronous buck converters, providing efficient power conversion in a compact form factor, ideal for a wide range of electronic applications.

    IRF7307TRPBF informationIRF7307TRPBF information

    IRF7307TRPBF FAQ

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    3. Are the IRF7307TRPBF price and inventory displayed accurate?

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    6. What is the process for return or replacement of IRF7307TRPBF?

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    (1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

    (2)We are informed of the defect described above within 90 days after the delivery of IRF7307TRPBF.

    (3)The PartNo is unused and only in the original unpacked packaging.

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    (1)Inform us within 90 days

    (2)Obtain Requesting Return Authorizations

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