What is the Additional Feature ?

Name: IRF7316TRPBF
Brand: Infineon Technologies
SKU: IRF7316TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IRF7316TRPBF

Part No.:: IRF7316TRPBF

Manufacturer:: Infineon Technologies

Package:: 8-SOIC (0.154, 3.90mm Width)

Datasheet:: IRF7316TRPBF.pdf

Description:: MOSFET 2P-CH 30V 4.9A 8SO

In Stock:: 3253

Quantity:: Add To Cart

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IRF7316TRPBF this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRF7316TRPBF price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRF7316TRPBF to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IRF7316TRPBF Typical application Circuitry

The IRF7316TRPBF is an integral part of the innovative HEXFET® Power MOSFET series, known for their high efficiency in power management and switching technologies. This particular component is a dual P-channel MOSFET, making it exceptionally suited for compact and efficient dual-switching applications in spaces such as power management for portable devices, DC-DC converters, and other low-voltage applications.

1. Dual Channel Configuration (VDS): The IRF7316TRPBF is designed with two P-channel MOSFETs in one package, each capable of handling drain-source voltages up to -30V. This dual configuration allows for greater flexibility in circuit design, enabling the implementation of complementary or independent switch controls within a single compact device. Each drain (D1, D2) should be connected to its respective load, while maintaining the capability to manage the power flow efficiently across both channels.

2. Gate Activation Mechanism (VGS): The gate-source voltage (VGS) is crucial for the operation of both P-channel MOSFETs within the IRF7316TRPBF. Applying a suitable negative voltage to the gates (G1, G2) relative to the sources (S1, S2) allows for precise control over each MOSFET's conduction state, facilitating effective power modulation and switching in the circuit.

3. Conduction Efficiency (ID): The IRF7316TRPBF boasts the ability to conduct significant currents in both channels, a characteristic vital for applications requiring efficient power handling. Designing the circuit to ensure low-resistance paths from the sources (S1, S2) to the drains (D1, D2) is essential to fully harness the capabilities of the IRF7316TRPBF, optimizing performance and minimizing potential power dissipation.

4. Thermal Management Strategies (RθJA, RθJC): Given the compact dual-channel design of the IRF7316TRPBF, effective thermal management is paramount. The device's thermal resistances, junction-to-ambient (RθJA) and junction-to-case (RθJC), highlight its heat dissipation capabilities. Implementing appropriate cooling measures, such as thermal vias or heat sinks, is crucial to ensure that the device operates within its specified temperature range, maintaining reliability and performance.

5. Integrated Protection Features (ESD Protection): The IRF7316TRPBF is equipped with built-in ESD protection, enhancing the device's resilience against electrostatic discharges and ensuring stable performance in sensitive applications. This protective feature is particularly important in portable and consumer electronics, where the risk of ESD events is higher.

6. Dynamic Switching Attributes (Fast Switching Speeds): The IRF7316TRPBF is characterized by its fast switching speeds, a feature that significantly reduces transition losses and enhances overall efficiency in applications requiring rapid switching, such as in PWM circuits.

7. Device Packaging and Installation (Lead Configuration, Soldering Recommendations): The compact SO-8 package of the IRF7316TRPBF is designed for efficient space utilization on PCBs, featuring a lead configuration that supports effective electrical and thermal connection. Following best practices for soldering is crucial to ensure the dual MOSFET's optimal functionality and longevity within the circuit.

Incorporating the IRF7316TRPBF into electronic designs demands a nuanced understanding of its dual-channel operation and a strategic approach to circuit integration. By carefully managing the connections to each terminal and considering the device's thermal and dynamic specifications, designers can effectively leverage the IRF7316TRPBF to enhance the power management and switching efficiency of their systems.

IRF7316TRPBF information

IRF7316TRPBF Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
HEXFET®
ProductStatus:
Active
FETType:
2 P-Channel (Dual)
FETFeature:
Logic Level Gate
DraintoSourceVoltage(Vdss):
30V
Current-ContinuousDrain(Id)@25°C:
4.9A
RdsOn(Max)@IdVgs:
58mOhm @ 4.9A, 10V
Vgs(th)(Max)@Id:
1V @ 250µA
GateCharge(Qg)(Max)@Vgs:
34nC @ 10V
InputCapacitance(Ciss)(Max)@Vds:
710pF @ 25V
Power-Max:
2W
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

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3. Are the IRF7316TRPBF price and inventory displayed accurate?

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6. What is the process for return or replacement of IRF7316TRPBF?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRF7316TRPBF we delivered, we will accept the replacement or return of the IRF7316TRPBF only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRF7316TRPBF.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations