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Name: 2N7002KDW-AU_R1_000A1
Brand: Panjit International Inc.
SKU: 2N7002KDW-AU_R1_000A1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Panjit International Inc. 2N7002KDW-AU_R1_000A1

Part No.:: 2N7002KDW-AU_R1_000A1

Manufacturer:: Panjit International Inc.

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: 2N7002KDW-AU_R1_000A1.pdf

Description:: 60V N-CHANNEL ENHANCEMENT MODE M

In Stock:: 2354

Quantity:: Add To Cart

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2N7002KDW-AU_R1_000A1 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
-
ProductStatus:
Active
FETType:
2 N-Channel (Dual)
FETFeature:
Standard
DraintoSourceVoltage(Vdss):
60V
Current-ContinuousDrain(Id)@25°C:
250mA (Ta)
RdsOn(Max)@IdVgs:
3Ohm @ 500mA, 10V
Vgs(th)(Max)@Id:
2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs:
0.8nC @ 5V
InputCapacitance(Ciss)(Max)@Vds:
35pF @ 25V
Power-Max:
350mW (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

2N7002KDW-AU_R1_000A1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including 2N7002KDW-AU_R1_000A1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for 2N7002KDW-AU_R1_000A1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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2N7002KDW-AU_R1_000A1 information

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2N7002KDW-AU_R1_000A1 Typical application Circuitry

2N7002KDW-AU_R1_000A1

2N7002KDW-AU_R1_000A1 is a dual N-channel enhancement-mode Field Effect Transistor (MOSFET) encapsulated in a compact SOT-363 package. It combines two independent N-channel MOSFETs in one package, offering designers a space-saving solution for various applications.

Potential Applications:

1. Load switching in space-constrained designs.

2. Power management tasks in multi-rail systems.

3. As a part of logic level shifters or translators.

4. In motor control circuits where dual independent drive is required.

Characteristic Features:

1. Drain-Source Voltage (Vds): Generally rated at around 60V.

2. Drain Current (Id): Typically can handle currents up to 300 mA per channel.

3. Threshold Voltage (Vgs(th)): Usually around 2.1V.

4. Rds(on): Low on-resistance, ensuring minimal conduction losses.

5. Double MOSFET Design: Two MOSFETs in a single package for dual operation.

Example Circuit: Dual Load Switching

Imagine a scenario where two independent loads, such as two different LEDs, need to be controlled separately using the 2N7002KDW-AU_R1_000A1.

1. Connecting the Loads:

For the first MOSFET inside 2N7002KDW-AU_R1_000A1, tie the Drain1 pin to one end of the first LED. For the second MOSFET, connect the Drain2 pin to one end of the second LED. The other terminals of both LEDs connect to the positive supply voltage (e.g., +5V).

2. Grounding the Source:

For both MOSFETs, their respective Source pins (Source1 and Source2) should be connected to the common ground.

3. Gate Control Mechanism:

The gates, Gate1 and Gate2, of the 2N7002KDW-AU_R1_000A1 determine the ON/OFF states of their respective MOSFETs. Use two separate switches for each gate. Each switch connects its corresponding gate to the positive supply voltage (e.g., +5V) when pressed. Also, incorporate pull-down resistors (say, 10kΩ) for both gates to ensure the MOSFETs remain off by default when the switches aren't pressed.

4. Safety Precautions:

Incorporate protection diodes (like 1N4148) in parallel with both LEDs. This step is especially significant if replacing the LEDs with other types of inductive loads, to safeguard against potential voltage spikes during switching.

Design Considerations:

1. Voltage Levels: Ensure that voltage levels applied, especially at the gate of 2N7002KDW-AU_R1_000A1, never exceed the manufacturer's recommended limits.

2. Thermal Aspects: Even with dual MOSFETs in a single package, 2N7002KDW-AU_R1_000A1 can heat up under constant or high-load operations. Assess the need for proper thermal management, possibly with heat sinks or PCB layout modifications.

3. Drive Strength: Consider the current needed to swiftly switch the MOSFETs on and off, especially in high-frequency operations. A dedicated gate driver might be a worthy addition in such scenarios.

4. ESD Protection: The 2N7002KDW-AU_R1_000A1, like other MOSFETs, is sensitive to electrostatic discharges. Ensure ESD precautions are in place during handling and usage.

In conclusion, the 2N7002KDW-AU_R1_000A1 is a dual MOSFET solution offering space and efficiency advantages in diverse applications. Proper attention to design nuances will help leverage its full potential effectively.

2N7002KDW-AU_R1_000A1 FAQ

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6. What is the process for return or replacement of 2N7002KDW-AU_R1_000A1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the 2N7002KDW-AU_R1_000A1 we delivered, we will accept the replacement or return of the 2N7002KDW-AU_R1_000A1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of 2N7002KDW-AU_R1_000A1.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations