What is the Additional Feature ?

Name: NTJD1155LT1G
Brand: ON Semiconductor
SKU: NTJD1155LT1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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ON Semiconductor NTJD1155LT1G

Part No.:: NTJD1155LT1G

Manufacturer:: ON Semiconductor

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: NTJD1155LT1G.pdf

Description:: MOSFET N/P-CH 8V 1.3A SOT363

In Stock:: 3257

Quantity:: Add To Cart

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NTJD1155LT1G Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk
Series:
-
ProductStatus:
Active
FETType:
N and P-Channel
FETFeature:
Standard
DraintoSourceVoltage(Vdss):
8V
Current-ContinuousDrain(Id)@25°C:
1.3A
RdsOn(Max)@IdVgs:
175mOhm @ 1.2A, 4.5V
Vgs(th)(Max)@Id:
1V @ 250µA
GateCharge(Qg)(Max)@Vgs:
-
InputCapacitance(Ciss)(Max)@Vds:
-
Power-Max:
400mW
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

NTJD1155LT1G this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including NTJD1155LT1G price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for NTJD1155LT1G to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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NTJD1155LT1G information

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NTJD1155LT1G Typical application Circuitry

NTJD1155LT1G

The NTJD1155LT1G, a dual N- and P-Channel Field Effect Transistor (MOSFET) by ON Semiconductor, stands out in electronic circuits for its ability to efficiently manage power. This component is particularly celebrated for its compact footprint and its prowess in minimizing power dissipation, positioning it as an ideal choice for applications where space is at a premium and energy efficiency is paramount.

Diverse Utilization of NTJD1155LT1G:

The versatility of the NTJD1155LT1G extends to numerous applications. It's especially pivotal in power regulation modules, acting as a proficient switch in electronic devices, and facilitating load switching operations. A prime application worth noting is in the realm of power distribution within electronic systems, where the NTJD1155LT1G excels in allocating power judiciously across various components.

Characteristic Hallmarks of NTJD1155LT1G:

1. Exceptional Conductivity: The NTJD1155LT1G boasts a remarkably low resistance when active, ensuring operational efficiency by curtailing power losses.

2. Rapid Transitioning: Tailored for applications demanding quick response, this MOSFET transitions between states with alacrity.

3. Dual Channel Configuration: Harmonizing two MOSFETs within a single package, the NTJD1155LT1G mitigates space constraints, simplifying circuit complexity.

In-Depth Circuit Assembly for Load Switching:

Consider a scenario where the NTJD1155LT1G governs a load-switching circuit. The assembly involves meticulous steps:

1. Power Source Integration: Select a power source that aligns with the NTJD1155LT1G's voltage specifications. Assume a 5V supply for this instance.

2. Source Pin Connectivity: Establish a connection from the power source's positive end to the P-channel's source pin (Pin 3), and link the N-channel's source pin (Pin 1) to the ground.

3. Load Integration: Position the load between the ground and the drain pin of the P-channel MOSFET (Pin 4).

4. Gate Control: Interface the gate pins of both the N-channel (Pin 2) and P-channel (Pin 5) MOSFETs with a control unit like a microcontroller. The voltage at these gate pins will dictate the MOSFETs' state, thereby managing the load's power.

5. Stabilization Resistor: A pull-down resistor on the N-channel's gate ensures the MOSFET remains inactive in the absence of a gate voltage.

Circuit Design Considerations:

Crafting a circuit with the NTJD1155LT1G necessitates thoughtful consideration of various factors:

1. Heat Dissipation: Although the NTJD1155LT1G is efficient, it still generates heat. Implementing robust thermal management strategies is crucial, especially in high-power setups.

2. Gate Voltage Compliance: It's imperative to maintain gate voltage levels within safe limits to prevent MOSFET damage and ensure optimal operation.

3. Transition Speed Management: The NTJD1155LT1G is inherently quick to switch. However, external factors like load capacitance and connection inductance can influence the overall switching performance.

4. Safeguarding Measures: Integrating protective features such as thermal cut-offs or current limiters can shield the NTJD1155LT1G and the connected apparatus from potential overcurrent or overheating mishaps.

In essence, the NTJD1155LT1G emerges as a robust and adaptable component, especially suited for power management and load switching tasks. A comprehensive understanding of its operational nuances is key to devising efficient, reliable circuits.

NTJD1155LT1G FAQ

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6. What is the process for return or replacement of NTJD1155LT1G?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the NTJD1155LT1G we delivered, we will accept the replacement or return of the NTJD1155LT1G only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of NTJD1155LT1G.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations