What is the Additional Feature ?

Name: NTGD4167CT1G
Brand: ON Semiconductor
SKU: NTGD4167CT1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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ON Semiconductor NTGD4167CT1G

Part No.:: NTGD4167CT1G

Manufacturer:: ON Semiconductor

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: NTGD4167CT1G.pdf

Description:: MOSFET N/P-CH 30V 2.6/1.9A 6TSOP

In Stock:: 3979

Quantity:: Add To Cart

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NTGD4167CT1G Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
-
ProductStatus:
Active
FETType:
N and P-Channel
FETFeature:
Logic Level Gate
DraintoSourceVoltage(Vdss):
30V
Current-ContinuousDrain(Id)@25°C:
2.6A, 1.9A
RdsOn(Max)@IdVgs:
90mOhm @ 2.6A, 4.5V
Vgs(th)(Max)@Id:
1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs:
5.5nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds:
295pF @ 15V
Power-Max:
900mW
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

NTGD4167CT1G this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including NTGD4167CT1G price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for NTGD4167CT1G to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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NTGD4167CT1G information

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NTGD4167CT1G Typical application Circuitry

NTGD4167CT1G

The NTGD4167CT1G is a Dual N-channel MOSFET designed for high-speed switching applications.

Application Scenarios: This type of MOSFET is often utilized in power management systems, synchronous rectification in DC-DC converters, and load switch applications.

Parameter Features NTGD4167CT1G: Characteristics like low gate charge (Qg), fast switching speed, and dual MOSFET configuration are typically notable for this MOSFET.

NTGD4167CT1G Circuit Connection:

1. Gate Control for Both MOSFETs: Connect a resistor to each gate (Pins 1 and 4) to control the gate current. This resistor is linked to a driving voltage.

2. Drain Connection: Connect the drains (Pins 2 and 5) to the respective loads.

3. Common Source: The common source (Pin 3) is grounded, providing a return path for both channels.

4. Freewheeling Diodes: Place diodes parallel to the loads for protection against voltage spikes in inductive applications.

Design Considerations:

1. Thermal Management: Given that there are two MOSFETs in one package, heat dissipation is a critical factor.

2. Drive Voltage: Ensure that the voltage applied to the gates is within the specified Vgs threshold to turn on the MOSFETs properly.

3. Isolation: Be cautious about the isolation between the two MOSFETs; they share a common source but may be switching different loads.

4. PCB Layout: A careful PCB layout is necessary to minimize inductance and ensure fast switching.

In conclusion, incorporating the NTGD4167CT1G into a circuit demands careful attention to heat management, appropriate gate drive voltages, isolation between the dual channels, and a PCB layout conducive to high-speed switching.

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of NTGD4167CT1G.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

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