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Nexperia USA Inc. BSS138BKS,115

Part No.:: BSS138BKS,115

Manufacturer:: Nexperia USA Inc.

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: BSS138BKS,115.pdf

Description:: MOSFET 2N-CH 60V 0.32A 6TSSOP

In Stock:: 2522

Quantity:: Add To Cart

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BSS138BKS,115 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
Automotive, AEC-Q101, TrenchMOS™
ProductStatus:
Active
FETType:
2 N-Channel (Dual)
FETFeature:
Logic Level Gate
DraintoSourceVoltage(Vdss):
60V
Current-ContinuousDrain(Id)@25°C:
320mA
RdsOn(Max)@IdVgs:
1.6Ohm @ 320mA, 10V
Vgs(th)(Max)@Id:
1.6V @ 250µA
GateCharge(Qg)(Max)@Vgs:
0.7nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds:
56pF @ 10V
Power-Max:
445mW
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

BSS138BKS,115 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including BSS138BKS,115 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for BSS138BKS,115 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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BSS138BKS,115 information

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BSS138BKS,115 Typical application Circuitry

BSS138BKS,115

The BSS138BKS,115 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), specifically designed for high-speed switching and signal amplification in a variety of electronic applications. The "BKS,115" in its name likely indicates a certain specification or version within the broader BSS138 series, possibly relating to packaging or performance standards. N-channel MOSFETs like the BSS138BKS,115 are valued for their efficiency in controlling electrical currents and are suitable for diverse applications.

Functional Role

N-Channel MOSFET: The BSS138BKS,115 functions as an N-channel MOSFET, optimized for rapid switching and efficient signal processing in electronic circuits.

Application Scenarios

In Digital Logic Control: Commonly used for controlling logic levels and switching operations in digital electronics.

For Load Switching: Employed in circuits for load switching, where precise control of power to specific circuit parts is necessary.

Key Parameters

Efficient Electrical Conductance: The BSS138BKS,115's low on-resistance allows for efficient electrical conductance, minimizing power losses.

High-Speed Switching Capability: Designed for rapid switching, making it suitable for dynamic electronic applications.

Circuit Example: Load Switching in a Power Management System

Design Objective: Constructing a load-switching circuit in a power management system using the BSS138BKS,115.

Detailed Circuit Construction

1. Power Source Connection: Begin by connecting a suitable DC power source, appropriate for the circuit's operational voltage.

2. MOSFET Integration: Implement the BSS138BKS,115 by connecting its drain pin (Pin 1) to the load, like an LED or a small motor.

3. Control Signal Application: Attach a control signal (from a microcontroller or timer circuit) to the gate pin (Pin 2). This signal will regulate the switching of the load.

4. Source Pin Grounding: Connect the source pin (Pin 3) of the BSS138BKS,115 to the circuit's common ground.

5. Load and Protective Configuration: Link the load to the drain and include necessary protective components, such as a current-limiting resistor for an LED.

Design Considerations

When designing circuits with the BSS138BKS,115, focus on these factors:

1. Appropriate Gate Voltage: Ensure the gate voltage is correct for effective MOSFET operation without overloading.

2. Heat Dissipation: Implement heat management if the MOSFET is expected to handle high currents.

3. Signal Clarity: Maintain the clarity of the control signal for precise operation of the load switching.

4. Load Specifications: Verify that the load's electrical characteristics match the MOSFET's operational capacity.

5. Circuit Protection: Incorporate elements like overcurrent protection to enhance the safety of the MOSFET and the load.

6. Minimizing Parasitic Effects: Design the circuit layout to reduce parasitic capacitance and inductance, crucial for maintaining high-speed performance.

7. Stable Power Source Utilization: Use a regulated power source to prevent voltage fluctuations that could impact the MOSFET's functionality.

8. Environmental Conditions Consideration: Factor in operating conditions like temperature and humidity, which might affect the MOSFET's efficiency.

In summary, the BSS138BKS,115 N-channel MOSFET is an efficient component, particularly effective for applications like load switching in power management systems. Its low on-resistance and high-speed switching capabilities make it a valuable choice for modern electronic designs. Key considerations for circuit integration include gate voltage precision, thermal management, signal integrity, and protective measures, ensuring optimal performance and reliability.

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6. What is the process for return or replacement of BSS138BKS,115?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of BSS138BKS,115.

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