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Name: 2N7002KDW_R1_00001
Brand: Panjit International Inc.
SKU: 2N7002KDW_R1_00001
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Panjit International Inc. 2N7002KDW_R1_00001

Part No.:: 2N7002KDW_R1_00001

Manufacturer:: Panjit International Inc.

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: 2N7002KDW_R1_00001.pdf

Description:: 60V N-CHANNEL ENHANCEMENT MODE M

In Stock:: 2878

Quantity:: Add To Cart

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2N7002KDW_R1_00001 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
-
ProductStatus:
Active
FETType:
2 N-Channel (Dual)
FETFeature:
Standard
DraintoSourceVoltage(Vdss):
60V
Current-ContinuousDrain(Id)@25°C:
115mA (Ta)
RdsOn(Max)@IdVgs:
3Ohm @ 500mA, 10V
Vgs(th)(Max)@Id:
2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs:
0.8nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds:
35pF @ 25V
Power-Max:
200mW (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

2N7002KDW_R1_00001 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including 2N7002KDW_R1_00001 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for 2N7002KDW_R1_00001 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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2N7002KDW_R1_00001 information

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2N7002KDW_R1_00001 Typical application Circuitry

2N7002KDW_R1_00001

The 2N7002KDW_R1_00001 stands as a dual N-channel enhancement-mode Field Effect Transistor (MOSFET) housed in a space-efficient SOT-363 package. By encapsulating two independent N-channel MOSFETs within a single casing, it offers a strategic solution for designers seeking to minimize their electronic footprint.

Applications at a Glance:

1. Dual load switching, making the most of its twin-channel configuration.

2. Partaking in power management roles across bifurcated systems.

3. Serving as logic level translators, given its MOSFET nature.

4. Enabling independent drive in dual motor control schemes.

A Closer Look at Features:

1. Voltage Standoff (Vds): A ballpark value stands around 60V, but specific values might vary.

2. Maximum Current (Id): Each channel usually boasts of an approximately 300 mA capacity.

3. Gate Threshold (Vgs(th)): This typically orbits the 2.1V mark.

4. Conduction Loss (Rds(on)): The 2N7002KDW_R1_00001 shines with a low on-resistance, promoting efficient operations.

5. Twin Design: Emphasizing its dual MOSFET feature which proffers parallel operations.

Zooming In: Dual Motor Control

Let's unravel how 2N7002KDW_R1_00001 can steer two small DC motors independently.

1. Engaging the Drains:

Connect Drain1 of 2N7002KDW_R1_00001 to the first DC motor and Drain2 to the second one. The opposite terminals of these motors get attached to your positive voltage supply.

2. Grounding Protocols:

Ensure that Source1 and Source2 pins of the 2N7002KDW_R1_00001 both culminate at the common ground.

3. Commanding the Gates:

Both Gate1 and Gate2 pins dictate the on/off modes of their respective MOSFETs. Introduce a microcontroller or logic gate outputs to these gate pins. For robust operations, integrating pull-down resistors (10kΩ, for example) for both gates ensures they default to an 'off' state when no driving signal is applied.

4. Flyback Diodes:

Because motors are inductive loads, incorporate flyback diodes across each motor. This counters any counter EMF that could pose harm to the 2N7002KDW_R1_00001 during motor shut-offs.

Crafting with Caution:

1. Voltage Awareness: Constant vigilance is necessary to ensure applied voltages, especially on the gates of 2N7002KDW_R1_00001, don't surpass the manufacturer's guidelines.

2. Dissipating Heat: Despite its dual-channel configuration, 2N7002KDW_R1_00001 could potentially generate heat under strenuous operations. Evaluating thermal dissipation strategies becomes crucial.

3. Signal Integrity: Depending on the application frequency, the inherent gate capacitance might affect MOSFET switching. Employing gate drivers could alleviate this.

4. Guarding Against ESD: Like its MOSFET brethren, the 2N7002KDW_R1_00001 is susceptible to electrostatic discharges. Protective measures during handling and circuit integration are vital.

In summation, while the 2N7002KDW_R1_00001 is an electronics marvel thanks to its dual MOSFET prowess, it's pivotal to approach its incorporation with an informed and cautionary perspective. Proper design insights can harness its capabilities to the fullest.

2N7002KDW_R1_00001 FAQ

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3. Are the 2N7002KDW_R1_00001 price and inventory displayed accurate?

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6. What is the process for return or replacement of 2N7002KDW_R1_00001?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the 2N7002KDW_R1_00001 we delivered, we will accept the replacement or return of the 2N7002KDW_R1_00001 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of 2N7002KDW_R1_00001.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations