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Name: SI7997DP-T1-GE3
Brand: Vishay Siliconix
SKU: SI7997DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Vishay Siliconix SI7997DP-T1-GE3

Part No.:: SI7997DP-T1-GE3

Manufacturer:: Vishay Siliconix

Package:: PowerPAK® SO-8 Dual

Datasheet:: SI7997DP-T1-GE3.pdf

Description:: MOSFET 2P-CH 30V 60A PPAK SO-8

In Stock:: 2106

Quantity:: Add To Cart

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SI7997DP-T1-GE3 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
TrenchFET®
ProductStatus:
Active
FETType:
2 P-Channel (Dual)
FETFeature:
Standard
DraintoSourceVoltage(Vdss):
30V
Current-ContinuousDrain(Id)@25°C:
60A
RdsOn(Max)@IdVgs:
5.5mOhm @ 20A, 10V
Vgs(th)(Max)@Id:
2.2V @ 250µA
GateCharge(Qg)(Max)@Vgs:
160nC @ 10V
InputCapacitance(Ciss)(Max)@Vds:
6200pF @ 15V
Power-Max:
46W
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

SI7997DP-T1-GE3 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including SI7997DP-T1-GE3 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for SI7997DP-T1-GE3 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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SI7997DP-T1-GE3 information

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SI7997DP-T1-GE3 Typical application Circuitry

SI7997DP-T1-GE3

The SI7997DP-T1-GE3 is a Dual N-Channel 30-V (D-S) MOSFET designed for power management applications, particularly in compact and energy-efficient devices. Known for its high efficiency, fast switching speed, and low on-resistance, this MOSFET is commonly used in applications such as load switches, DC/DC converters, and power management in portable and battery-powered devices.

Functionality of SI7997DP-T1-GE3

The SI7997DP-T1-GE3 functions as a power switch, efficiently controlling the flow of electrical power in a circuit. Its dual N-channel configuration allows for the integration of two MOSFETs in a single package, optimizing space and performance in power management applications.

Application Scenarios

1. Load Switching in Portable Devices: The SI7997DP-T1-GE3 is used in smartphones, tablets, and other portable devices to manage power distribution efficiently.

2. DC/DC Converters: In DC/DC converter circuits, this MOSFET is employed for its fast switching capabilities and high efficiency.

Parameter Characteristics

Key parameters of the SI7997DP-T1-GE3 include:

- Drain-Source Voltage (Vds): The maximum voltage the MOSFET can handle across the drain and source terminals.

- Continuous Drain Current (Id): The maximum current the MOSFET can conduct in continuous operation.

- RDS(on): Represents the on-resistance of the MOSFET, a critical parameter determining power loss during operation.

- Gate Charge (Qg): The total charge required to turn the MOSFET on, influencing the switching speed.

Circuit Integration: Load Switching in a Portable Device

Let's detail the implementation of the SI7997DP-T1-GE3 in a portable device for load switching:

1. Power Source Connection: Connect the source terminal of the SI7997DP-T1-GE3 to the ground. This establishes a return path for the current.

2. Load Connection: Attach the drain terminal of the SI7997DP-T1-GE3 to the load. Ensure that the load does not exceed the maximum drain current rating of the MOSFET.

3. Gate Control: Interface the gate terminal with a control signal (from a microcontroller or a switch). This signal will control the on/off state of the SI7997DP-T1-GE3.

4. Gate Pull-down Resistor: Connect a pull-down resistor to the gate terminal to ensure that the MOSFET remains off when there is no control signal.

5. Heat Dissipation: If the SI7997DP-T1-GE3 is expected to handle high currents, consider using a heat sink to manage heat dissipation.

Design Considerations

When integrating the SI7997DP-T1-GE3 into a circuit, consider the following:

- Thermal Management: Ensure proper heat dissipation to prevent the MOSFET from overheating, especially in high-current applications.

- Gate Drive Voltage: Provide an appropriate gate drive voltage to fully turn on the MOSFET, ensuring minimal RDS(on) and power loss.

- Load Characteristics: Understand the characteristics of the load, including inrush current and steady-state current, to select a MOSFET with suitable ratings.

- Protection Mechanisms: Implement protection mechanisms such as over-current protection and thermal shutdown to safeguard the MOSFET and the load.

In conclusion, the SI7997DP-T1-GE3 is a high-performance Dual N-Channel MOSFET ideal for power management applications in compact and energy-efficient devices. Its proper integration, considering design best practices, can significantly enhance the power efficiency and reliability of the systems in which it's used.

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6. What is the process for return or replacement of SI7997DP-T1-GE3?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the SI7997DP-T1-GE3 we delivered, we will accept the replacement or return of the SI7997DP-T1-GE3 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of SI7997DP-T1-GE3.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

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