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Name: SI7252DP-T1-GE3
Brand: Vishay Siliconix
SKU: SI7252DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Vishay Siliconix SI7252DP-T1-GE3

Part No.:: SI7252DP-T1-GE3

Manufacturer:: Vishay Siliconix

Package:: PowerPAK® SO-8 Dual

Datasheet:: SI7252DP-T1-GE3.pdf

Description:: MOSFET 2N-CH 100V 36.7A PPAK 8SO

In Stock:: 2721

Quantity:: Add To Cart

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SI7252DP-T1-GE3 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
TrenchFET®
ProductStatus:
Active
FETType:
2 N-Channel (Dual)
FETFeature:
Logic Level Gate
DraintoSourceVoltage(Vdss):
100V
Current-ContinuousDrain(Id)@25°C:
36.7A
RdsOn(Max)@IdVgs:
18mOhm @ 15A, 10V
Vgs(th)(Max)@Id:
3.5V @ 250µA
GateCharge(Qg)(Max)@Vgs:
27nC @ 10V
InputCapacitance(Ciss)(Max)@Vds:
1170pF @ 50V
Power-Max:
46W
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

SI7252DP-T1-GE3 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including SI7252DP-T1-GE3 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for SI7252DP-T1-GE3 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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SI7252DP-T1-GE3 information

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SI7252DP-T1-GE3 Typical application Circuitry

The SI7252DP-T1-GE3 is a P-Channel 40V (D-S) MOS FET from Vi shay Silicon ix. This device can be utilized in various applications, such as power management, load switching, and more. Here's a detailed guide to connecting the SI7252DP-T1-GE3, ensuring precision down to individual pins:

1. Drain (D, Pin 1): The Drain pin of the SI7252DP-T1-GE3 is where the output current flows out, and it should be connected to the part of the circuit that is to be controlled (e.g., a load). It is the main current-carrying terminal.

2. Gate (G, Pin 2): The Gate pin controls the ON/OFF status of the SI7252DP-T1-GE3. Apply a voltage within the specified range to turn the MOS FET on. The Gate voltage needs to be raised to the Source's potential in order to be turned off. Depending on the application, this pin might be driven by a microcontroller, PWM controller, or another transistor stage. Ensure that the voltage at this pin does not exceed the maximum Gate-Source voltage as specified in the data sheet to prevent damage to the SI7252DP-T1-GE3.

3. Source (S, Pin 3): The terminal via which electricity enters the SI7252DP-T1-GE3 is known as the Source pin. Connect this pin to the point in the circuit where you want to switch the current flow on or off. Typically, in a P-Channel MOS FET like the SI7252DP-T1-GE3, the Source is connected to the positive supply voltage.

4. Thermal Pad (Pin 4, Bottom): The SI7252DP-T1-GE3 also includes a thermal pad on the underside of the package. This pad, which is typically attached to the Source, should be soldered to the PCB. It aids in the thermal management of the device, ensuring that the SI7252DP-T1-GE3 can handle the desired power levels without overheating.

When implementing the SI7252DP-T1-GE3 in a design, careful attention should be paid to the layout to minimize parasitic inductance and resistance, which can affect the performance and efficiency of the circuit. As always, consultation with the specific data sheet for the SI7252DP-T1-GE3 is recommended to ensure that all the absolute maximum ratings and recommended operating conditions are strictly adhered to, preserving the integrity and reliability of the device.

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6. What is the process for return or replacement of SI7252DP-T1-GE3?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the SI7252DP-T1-GE3 we delivered, we will accept the replacement or return of the SI7252DP-T1-GE3 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of SI7252DP-T1-GE3.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations