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Name: NVMFD5C650NLT1G
Brand: ON Semiconductor
SKU: NVMFD5C650NLT1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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ON Semiconductor NVMFD5C650NLT1G

Part No.:: NVMFD5C650NLT1G

Manufacturer:: ON Semiconductor

Package:: 8-PowerTDFN

Datasheet:: NVMFD5C650NLT1G.pdf

Description:: MOSFET 2N-CH 60V 111A S08FL

In Stock:: 2333

Quantity:: Add To Cart

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NVMFD5C650NLT1G Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
Automotive, AEC-Q101
ProductStatus:
Active
FETType:
2 N-Channel (Dual)
FETFeature:
Standard
DraintoSourceVoltage(Vdss):
60V
Current-ContinuousDrain(Id)@25°C:
21A (Ta), 111A (Tc)
RdsOn(Max)@IdVgs:
4.2mOhm @ 20A, 10V
Vgs(th)(Max)@Id:
2.2V @ 98µA
GateCharge(Qg)(Max)@Vgs:
16nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds:
2546pF @ 25V
Power-Max:
3.5W (Ta), 125W (Tc)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Surface Mount

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NVMFD5C650NLT1G information

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NVMFD5C650NLT1G Typical application Circuitry

NVMFD5C650NLT1G

The NVMFD5C650NLT1G is a dual N-channel Power MOSFET optimized for high efficiency and power density in a variety of applications, particularly where space and power efficiency are critical.

Application Scenarios

A significant application area for the NVMFD5C650NLT1G is in electric vehicle (EV) powertrain systems, specifically for use in traction inverters that control the electric motors. In such applications, the MOSFET's high voltage and current handling capabilities, combined with its efficiency and reliability, are crucial for optimizing performance and extending the vehicle's range.

Parameters and Features

The NVMFD5C650NLT1G boasts several key features:

- High voltage capability, typically up to 650V, allowing it to efficiently manage the high voltages common in EV powertrains.

- Low on-resistance (R_DS(on)), which minimizes conduction losses and improves overall energy efficiency.

- Dual N-channel configuration, facilitating compact designs by integrating two MOSFETs into one package.

- Fast switching speed, essential for reducing switching losses in high-frequency power conversion applications.

- Robust thermal performance, ensuring reliable operation under varying temperature conditions, which is particularly important in the demanding environment of an EV.

Detailed Circuit Connection for an EV Traction Inverter

1. DC Link Connection: Connect the drain of the high-side MOSFET in the NVMFD5C650NLT1G to the positive terminal of the DC link. This link serves as the intermediary between the battery and the inverter, supplying power to the MOSFET for conversion.

2. Motor Phase Connection: Attach the source of the high-side MOSFET to one phase of the motor. In a three-phase system, multiple NVMFD5C650NLT1G units would be used, each connected to a different motor phase, allowing for precise control over motor speed and torque.

3. Gate Drive Circuitry: Connect the gate of each MOSFET to a dedicated gate driver. These drivers are critical for accurately controlling the timing and intensity of the MOSFET's switching events, ensuring efficient operation and minimizing losses.

4. Heat Dissipation Measures: Implement effective heat dissipation techniques, such as attaching heatsinks to the NVMFD5C650NLT1G and ensuring adequate airflow around the component. Efficient thermal management is essential for maintaining performance and reliability under the high load conditions experienced in EV applications.

5. Protection and Monitoring: Integrate protection circuits for over-current, over-voltage, and over-temperature conditions to prevent damage to the MOSFETs and the motor. Monitoring circuits can also provide valuable feedback on the system's performance and health.

Design Considerations

- Efficiency Optimization: Leverage the low on-resistance and fast switching capabilities of the NVMFD5C650NLT1G to maximize efficiency, which is paramount in extending the EV's driving range.

- Gate Driver Compatibility: Ensure that the gate drivers are compatible with the NVMFD5C650NLT1G's specifications, providing the necessary voltage and current to fully switch the MOSFETs on and off at the required frequencies.

- EMI Management: Design the circuit to minimize electromagnetic interference (EMI), using appropriate filtering, shielding, and layout techniques, especially given the high switching speeds and currents involved.

- Reliability Under Stress: Account for the demanding operational environment of EVs, including temperature extremes and vibrations, ensuring that the NVMFD5C650NLT1G and the overall inverter design are robust enough to handle such conditions.

Incorporating the NVMFD5C650NLT1G into EV traction inverters requires a focus on efficiency, thermal management, and reliability. This MOSFET's dual-channel configuration, combined with its electrical and thermal performance characteristics, makes it an excellent choice for developing high-efficiency, compact power conversion systems in electric vehicles and other high-performance applications.

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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