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Name: NVMFD5C462NLT1G
Brand: ON Semiconductor
SKU: NVMFD5C462NLT1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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ON Semiconductor NVMFD5C462NLT1G

Part No.:: NVMFD5C462NLT1G

Manufacturer:: ON Semiconductor

Package:: 8-PowerTDFN

Datasheet:: NVMFD5C462NLT1G.pdf

Description:: MOSFET 2N-CH 40V 84A S08FL

In Stock:: 3547

Quantity:: Add To Cart

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NVMFD5C462NLT1G Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
Automotive, AEC-Q101
ProductStatus:
Active
FETType:
2 N-Channel (Dual)
FETFeature:
Standard
DraintoSourceVoltage(Vdss):
40V
Current-ContinuousDrain(Id)@25°C:
18A (Ta), 84A (Tc)
RdsOn(Max)@IdVgs:
4.7mOhm @ 10A, 10V
Vgs(th)(Max)@Id:
2.2V @ 40µA
GateCharge(Qg)(Max)@Vgs:
11nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds:
1300pF @ 25V
Power-Max:
3W (Ta), 50W (Tc)
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Surface Mount

NVMFD5C462NLT1G this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including NVMFD5C462NLT1G price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for NVMFD5C462NLT1G to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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NVMFD5C462NLT1G information

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NVMFD5C462NLT1G Typical application Circuitry

The NVMFD5C462NLT1G belongs to a specialized series of power MOSFETs manufactured by ON Semiconductor, designed primarily for high-efficiency power conversion and switching applications. Renowned for its compact design and robust performance, this MOSFET is a popular choice in automotive, power supply, and other high-demand electronic applications.

1. Operational Characteristics and Voltage Parameters: The NVMFD5C462NLT1G is engineered to work within a specific voltage range, typically around 40V to 60V. It is appropriate for a variety of power applications because of this property. The device also boasts a relatively low gate threshold voltage, generally in the range of 2V to 4V, necessitating precise control for efficient operation. Its low on-resistance also helps to increase system efficiency by cutting down on power losses.

2. Pin Configuration and Detailed Connectivity: The NVMFD5C462NLT1G MOSFET is equipped with a standard set of terminals: gate (G), drain (D), and source (S). In essence, the gate terminal serves as the MOSFET's control terminal by controlling the current flow between the drain and source. The source terminal acts as the current flow's reference point, whereas the drain is the main terminal that carries current. Proper connection of these terminals to the respective circuit elements is crucial for the MOSFET to function effectively.

3. Circuit Integration Techniques: Integrating the NVMFD5C462NLT1G into electronic circuits is essential for applications that require efficient power management, such as in DC-DC converters or as a switching element in power supplies. Its high-speed switching capability is a key factor in minimizing energy losses during transitions, thereby enhancing the overall efficiency of the circuit. The MOSFET should be strategically placed within the circuit to optimize its performance, taking into account factors like current paths and thermal management.

4. Applications and Adaptability: The NVMFD5C462NLT1G is notable for its capacity to handle high currents with minimal loss, which makes it highly adaptable to various demanding applications. Its robustness and efficiency are particularly beneficial in automotive electronics and industrial power systems, where reliable and efficient power handling is crucial.

5. Design Recommendations for Circuit and PCB Layout: When designing a PCB that incorporates the NVMFD5C462NLT1G, special attention should be paid to the layout of the gate, drain, and source connections. These connections should be designed to accommodate the current requirements of the circuit and to minimize parasitic effects like inductance. Furthermore, taking into account the thermal factors is crucial since MOSFETs may produce a lot of heat when they are operating. Proper thermal management is key to maintaining the MOSFET's efficiency and longevity.

6. Adherence to Industry Standards: The NVMFD5C462NLT1G from ON Semiconductor complies with rigorous industry standards, ensuring its suitability for a wide array of applications where performance and reliability are critical.

7. Installation and Handling Guidelines: The NVMFD5C462NLT1G, like most semiconductor devices, is sensitive to electrostatic discharge (ESD) and requires careful handling. Appropriate ESD precautions should be taken during installation to prevent damage and ensure the device's integrity.

In summary, the NVMFD5C462NLT1G from ON Semiconductor is a high-performance MOSFET, well-suited for various applications requiring efficient power handling and switching. Effective usage of this component involves understanding its voltage and current specifications, ensuring accurate pin connectivity, strategic circuit integration, taking advantage of its adaptability, thoughtful PCB design, compliance with industry standards, and careful handling and installation. These practices guarantee that the NVMFD5C462NLT1G operates at its best, contributing to the efficiency and reliability of power management systems.

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6. What is the process for return or replacement of NVMFD5C462NLT1G?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of NVMFD5C462NLT1G.

(3)The PartNo is unused and only in the original unpacked packaging.

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