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Name: NVMFD5877NLT1G
Brand: ON Semiconductor
SKU: NVMFD5877NLT1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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ON Semiconductor NVMFD5877NLT1G

Part No.:: NVMFD5877NLT1G

Manufacturer:: ON Semiconductor

Package:: 8-PowerTDFN

Datasheet:: NVMFD5877NLT1G.pdf

Description:: MOSFET 2N-CH 60V 6A 8SOIC

In Stock:: 3290

Quantity:: Add To Cart

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NVMFD5877NLT1G Specifications

Packaging:
Tape & Reel (TR)
Series:
Automotive, AEC-Q101
ProductStatus:
Obsolete
FETType:
2 N-Channel (Dual)
FETFeature:
Logic Level Gate
DraintoSourceVoltage(Vdss):
60V
Current-ContinuousDrain(Id)@25°C:
6A
RdsOn(Max)@IdVgs:
39mOhm @ 7.5A, 10V
Vgs(th)(Max)@Id:
3V @ 250µA
GateCharge(Qg)(Max)@Vgs:
20nC @ 10V
InputCapacitance(Ciss)(Max)@Vds:
540pF @ 25V
Power-Max:
3.2W
OperatingTemperature:
-55°C ~ 175°C (TJ)
MountingType:
Surface Mount

NVMFD5877NLT1G this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including NVMFD5877NLT1G price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for NVMFD5877NLT1G to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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NVMFD5877NLT1G information

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NVMFD5877NLT1G Typical application Circuitry

NVMFD5877NLT1G

The NVMFD5877NLT1G is a dual N-channel Power MOSFET, designed for high efficiency and power density in various electronic applications. This component is part of a broader family of MOSFETs that are widely used for their efficiency in switching applications, low on-resistance, and ability to handle significant power levels in compact form factors.

Application Scenarios

A typical application for the NVMFD5877NLT1G is in synchronous buck converter circuits, which are commonly used in power supply units for computers, telecommunications equipment, and other electronic devices requiring stable and efficient DC-DC power conversion. Its dual-channel configuration allows for integrated designs, reducing the overall footprint and improving efficiency in switching applications.

Parameters and Features

The NVMFD5877NLT1G offers several notable features:

- Dual N-Channel MOSFET design, facilitating compact and efficient circuit layouts.

- Low on-resistance (R_DS(on)), which reduces conduction losses and raises power efficiency in general.

- High current handling capability, suitable for applications with high power demands.

- Fast switching speeds, enhancing performance in high-frequency power conversion applications.

- Power SO-8 package, providing a balance between thermal performance and compactness.

Detailed Synchronous Buck Converter Circuit Connection

1. Input Voltage Connection: Connect the drain of the high-side MOSFET (one of the channels in NVMFD5877NLT1G) to the positive terminal of the input voltage source. This setup is essential for directing power through the converter.

2. Switching Node to Inductor: An inductor should be connected to one end of the switching node, which is situated at the intersection of the low-side MOSFET's source and high-side MOSFET's drain. This inductor plays a critical role in smoothing out the pulsed voltage into a more stable DC output.

3. Output Capacitor and Load: The other end of the inductor connects to the positive terminal of the output capacitor and load. The output capacitor helps filter out residual AC ripple, ensuring a stable DC output.

4. Ground Connection: Attach the low-side MOSFET's source to the earth. This creates a path for the current to return and is essential to the circuit's correct operation.

5. Gate Drive Circuitry: Implement gate drivers to control the switching of both the high-side and low-side MOSFETs. Proper gate drive is crucial for achieving efficient, fast switching and minimizing transition losses.

Design Considerations

- Thermal Management: Due to the compact dual-channel design, ensuring adequate heat dissipation for the NVMFD5877NLT1G is crucial. This could entail building the PCB to enable thermal control or use heatsinks.

- Gate Drive Optimization: Careful design of the gate drive circuitry is necessary to ensure that the MOSFETs switch efficiently and without excessive delay, as this impacts the overall efficiency and performance of the converter.

- Protection Features: Incorporating protection mechanisms such as over-current, over-voltage, and thermal protection can enhance the reliability and longevity of the circuit.

- PCB Layout: Paying attention to the PCB layout, especially in terms of minimizing loop areas and managing parasitic inductances and capacitances, is important for reducing noise and ensuring stable operation.

Incorporating the NVMFD5877NLT1G into synchronous buck converter circuits, or similar power conversion applications, necessitates a thoughtful approach to design, focusing on efficiency, thermal management, and reliability. The component's dual N-channel configuration and electrical characteristics make it an excellent choice for developing high-efficiency, compact power supply solutions.

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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