What is the Additional Feature ?

Name: NTHD4102PT1G
Brand: ON Semiconductor
SKU: NTHD4102PT1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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ON Semiconductor NTHD4102PT1G

Part No.:: NTHD4102PT1G

Manufacturer:: ON Semiconductor

Package:: 8-SMD, Flat Lead

Datasheet:: NTHD4102PT1G.pdf

Description:: MOSFET 2P-CH 20V 2.9A CHIPFET

In Stock:: 2724

Quantity:: Add To Cart

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NTHD4102PT1G Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
-
ProductStatus:
Active
FETType:
2 P-Channel (Dual)
FETFeature:
Logic Level Gate
DraintoSourceVoltage(Vdss):
20V
Current-ContinuousDrain(Id)@25°C:
2.9A
RdsOn(Max)@IdVgs:
80mOhm @ 2.9A, 4.5V
Vgs(th)(Max)@Id:
1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs:
8.6nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds:
750pF @ 16V
Power-Max:
1.1W
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

NTHD4102PT1G this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including NTHD4102PT1G price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for NTHD4102PT1G to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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NTHD4102PT1G information

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NTHD4102PT1G Typical application Circuitry

NTHD4102PT1G

The dual N-channel MOSFET, or NTHD4102PT1G, is a kind of semiconductor device used for amplifying and switching electronic signals. Dual N-channel MOSFETs are commonly used in applications where compact size and efficient switching of electrical currents are required, such as power management circuits, motor control, and load-switching applications.

Application Scenarios

Motor Control in Portable Devices: The NTHD4102PT1G is particularly suitable for controlling small motors in portable electronic devices, where space is limited and power efficiency is crucial. This includes devices like portable fans, toy motors, or camera autofocus mechanisms.

Parameter Features

- Dual N-Channel Configuration: The NTHD4102PT1G features two N-channel MOSFETs in one package, allowing for compact circuit designs.

- Low On-Resistance (Rds(on)): It typically offers low on-resistance, which improves efficiency by reducing power losses when the MOSFET is in the conducting state.

- High Drain-Source Voltage (Vds): The device can handle high voltages across the drain and source terminals, making it suitable for various electronic applications.

- Fast Switching Speed: Fast switching capabilities minimize transition losses and improve efficiency in high-frequency applications.

Circuit Design Considerations

When integrating the NTHD4102PT1G into a circuit, considerations should include thermal management due to power dissipation, ensuring proper gate drive to fully activate the MOSFETs, and protecting the device from voltage spikes and excessive currents.

Detailed Circuit Connection Example: H-Bridge Motor Control

An H-bridge circuit using two NTHD4102PT1G devices can control the direction and speed of a small DC motor, a common requirement in portable electronic devices.

- Motor Connection: Connect the motor between the drain terminals of the MOSFETs in one NTHD4102PT1G device. This means that, depending on which pair of MOSFETs is enabled, the motor can be driven in either direction.

- Power Supply: Attach the positive terminal of the power supply to the source terminals of the high-side MOSFETs (in both NTHD4102PT1G devices).

- Ground Connection: Connect the source terminals of the low-side MOSFETs to the ground.

- Gate Drive: Connect the gate terminals of each MOSFET in the NTHD4102PT1G to a microcontroller or a dedicated motor driver IC that can provide the appropriate PWM signals. Because the MOSFETs are activated alternately in this design, the motor's speed and direction may be precisely controlled.

- Protection Features: Include flyback diodes across the motor terminals to protect the MOSFETs from voltage spikes generated by the inductive load when switching.

Designing with the NTHD4102PT1G in this application requires careful attention to the PWM signal timing to prevent shoot-through (a condition where both high-side and low-side MOSFETs are on simultaneously, causing a short circuit). It's also crucial to ensure that the NTHD4102PT1G's thermal limits are not exceeded by using appropriate heat sinking and by managing the duty cycle and frequency of the PWM signals to minimize heat generation.

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6. What is the process for return or replacement of NTHD4102PT1G?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of NTHD4102PT1G.

(3)The PartNo is unused and only in the original unpacked packaging.

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