IRF8313TRPBF

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Infineon Technologies IRF8313TRPBF

HIGH-RELIABILITY-COMPONENTS
Part No.:
IRF8313TRPBF
Manufacturer:
Infineon Technologies
Package:
8-SOIC (0.154, 3.90mm Width)
Datasheet:
IRF8313TRPBF.pdf
Description:
MOSFET 2N-CH 30V 9.7A 8SO
In Stock:
3383
Quantity:
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  • Purchase and inquiryPurchase and inquiry

    IRF8313TRPBF this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRF8313TRPBF price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRF8313TRPBF to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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    IRF8313TRPBF informationIRF8313TRPBF information

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    IRF8313TRPBF Typical application Circuitry

    IRF8313TRPBF

    The IRF8313TRPBF is a Power MOSFET, part of the HEXFET® power MOSFET series from Infineon Technologies (formerly International Rectifier). This MOSFET is designed for efficient power management and high-speed switching applications, featuring low on-resistance and high switching performance. It's commonly used in power supplies, motor controls, and high-speed switching applications.

    Application Scenarios

    The IRF8313TRPBF is versatile, finding applications in synchronous rectification in SMPS (Switched Mode Power Supplies), high-frequency DC-DC converters, and load-switching applications. Its efficiency and fast switching capabilities make it suitable for compact and energy-sensitive circuits.

    Parameter Features

    Key features of the IRF8313TRPBF include:

    - Drain-Source Voltage (Vds): It supports a maximum voltage, making it suitable for a variety of mid-range power applications.

    - Continuous Drain Current (Id): Capable of carrying high currents, which is beneficial in power-intensive applications.

    - Rds(on): Features a low on-state resistance, ensuring minimal power loss during operation and enhancing overall efficiency.

    - Package: Available in an SO-8 package, which is ideal for compact designs with limited PCB space.

    Circuit Connection Example: High-Frequency DC-DC Converter

    In a high-frequency DC-DC converter, the IRF8313TRPBF can be used as the primary switching element in a synchronous buck converter topology.

    1. Gate Drive Connection: Connect the Gate pin (pin 1) to the PWM output of a high-frequency driver IC. In order to regulate the MOSFET's switching in accordance with the intended output voltage and current, this driver modifies the gate voltage.

    2. Drain Connection to Input Voltage: Attach the Drain pin (pin 2) directly to the high-voltage input supply. When the MOSFET is in the on state, this pin serves as the primary current path.

    3. Source Connection to Ground/Load: Attach pin 3, the source, to either the load's negative side or to ground.

    In synchronous rectification, this pin is often connected through an inductor to the load and then to ground.

    4. Bootstrap Circuit: Include a bootstrap diode and capacitor between the high-side drive voltage and the gate drive to ensure the gate can be driven above the input supply voltage, essential for fully enhancing the high-side MOSFET in a synchronous buck converter.

    5. Output Filtering: Employ an output LC filter (inductor and capacitor) to smooth the PWM ripple, providing a steady DC output. The inductor is connected between the Drain and the load, while the capacitor is placed between the load and ground.

    Design Considerations

    When designing with the IRF8313TRPBF, several factors must be taken into account:

    - Thermal Management: Given the compact SO-8 package, ensuring adequate heat dissipation is crucial. This might involve thermal vias under the MOSFET pad and possibly a heatsink or airflow if the power dissipation is significant.

    - Gate Drive Strength: The gate driver must provide sufficient current to quickly switch the IRF8313TRPBF on and off, minimizing transition losses and preventing the MOSFET from operating in the linear region longer than necessary.

    - Parasitic Elements: Minimize parasitic inductance and capacitance in the layout to reduce ringing and voltage overshoots, which are critical in high-speed switching applications.

    - Protection Mechanisms: Implementing over-current, over-voltage, and thermal protection can enhance the reliability of the circuit, especially in high-performance DC-DC converters where the IRF8313TRPBF is used.

    By carefully considering these design aspects and properly implementing the IRF8313TRPBF in a high-frequency DC-DC converter, designers can achieve efficient, reliable, and compact power conversion solutions suitable for a wide range of electronic applications.

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    3. Are the IRF8313TRPBF price and inventory displayed accurate?

    The price and inventory of IRF8313TRPBF fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

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    6. What is the process for return or replacement of IRF8313TRPBF?

    All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRF8313TRPBF we delivered, we will accept the replacement or return of the IRF8313TRPBF only when all of the below conditions are fulfilled:

    (1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

    (2)We are informed of the defect described above within 90 days after the delivery of IRF8313TRPBF.

    (3)The PartNo is unused and only in the original unpacked packaging.

    Two processes to return the products:

    (1)Inform us within 90 days

    (2)Obtain Requesting Return Authorizations

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