What is the Additional Feature ?

Name: IRF7351TRPBF
Brand: Infineon Technologies
SKU: IRF7351TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IRF7351TRPBF

Part No.:: IRF7351TRPBF

Manufacturer:: Infineon Technologies

Package:: 8-SOIC (0.154, 3.90mm Width)

Datasheet:: IRF7351TRPBF.pdf

Description:: MOSFET 2N-CH 60V 8A 8-SOIC

In Stock:: 3235

Quantity:: Add To Cart

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IRF7351TRPBF Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
HEXFET®
ProductStatus:
Active
FETType:
2 N-Channel (Dual)
FETFeature:
Logic Level Gate
DraintoSourceVoltage(Vdss):
60V
Current-ContinuousDrain(Id)@25°C:
8A
RdsOn(Max)@IdVgs:
17.8mOhm @ 8A, 10V
Vgs(th)(Max)@Id:
4V @ 50µA
GateCharge(Qg)(Max)@Vgs:
36nC @ 10V
InputCapacitance(Ciss)(Max)@Vds:
1330pF @ 30V
Power-Max:
2W
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

IRF7351TRPBF this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRF7351TRPBF price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRF7351TRPBF to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IRF7351TRPBF information

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IRF7351TRPBF Typical application Circuitry

The IRF7351TRPBF, heralded as part of International Rectifier's esteemed HEXFET power MOSFET series, is a dual P-channel device celebrated for its energy-efficient operation and compact design. These MOSFETs, leveraging the state-of-the-art silicon technology, epitomize the confluence of performance, reliability, and miniaturization. Below, we'll demystify the IRF7351TRPBF's pin connections and provide an illuminative guide on its circuit integration.

1. Source 1 (S1) and Source 2 (S2): Being P-channel MOSFETs, the source pins (S1 and S2) generally tie to the positive voltage rail of the circuit. This arrangement ensures the supply voltage is accessible when the MOSFET is activated.

2. Gate 1 (G1) and Gate 2 (G2): These pins play pivotal roles in governing the operational states of the IRF7351TRPBF's MOSFETs. The gate voltages regulate the flow of current between the drain and source. For turning the MOSFETs on, apply a voltage lower than the source voltage to these pins. Conversely, to turn the MOSFETs off, connect the gates to the same potential as the sources. Inclusion of gate resistors is prudent, offering a buffer against potential oscillations and ensuring signal stability.

3. Drain 1 (D1)/Drain 2 (D2): D1 and D2 serve as the output terminals, directing current to subsequent stages or loads. Ingeniously, the IRF7351TRPBF amalgamates the drains of its dual MOSFETs, offering space-saving advantages and circuit simplicity.

4. Enhanced Circuit Integration Wisdom:

- Gate Drive Dynamics: Since these are P-channel MOSFETs, their behavior contrasts with N-channel counterparts. The MOSFETs inside the IRF7351TRPBF turn on when the gate voltage is lower than the source and off when it's approximately equal to the source.

- Protection Measures: Incorporate a zener diode across the gate and source terminals. This proactive measure curbs the gate voltage, ensuring it remains within the IRF7351TRPBF's permissible thresholds, shielding the component from potential overvoltage hazards.

- Thermal Management: Even the IRF7351TRPBF, with its efficiency pedigree, isn't immune to thermal challenges under high current. It's pivotal to factor in thermal considerations, deploying heat sinks or thermal pads as required.

- Component Testing: Post integration, it's paramount to subject the circuit to rigorous testing. This ensures the IRF7351TRPBF operates seamlessly, meeting desired parameters and efficiency standards.

In the grand tapestry of electronics design, the IRF7351TRPBF emerges as a linchpin, representing the zenith in P-channel MOSFET technology. To extract its full potential and ensure longevity, adhere to its datasheet's guidelines, understand its unique P-channel dynamics, and be meticulous in circuit connections. The prominence of the IRF7351TRPBF in efficient power management scenarios underscores its importance in modern electronics.

IRF7351TRPBF FAQ

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3. Are the IRF7351TRPBF price and inventory displayed accurate?

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6. What is the process for return or replacement of IRF7351TRPBF?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRF7351TRPBF we delivered, we will accept the replacement or return of the IRF7351TRPBF only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRF7351TRPBF.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations