What is the Additional Feature ?

Name: IRF7342TRPBF
Brand: Infineon Technologies
SKU: IRF7342TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IRF7342TRPBF

Part No.:: IRF7342TRPBF

Manufacturer:: Infineon Technologies

Package:: 8-SOIC (0.154, 3.90mm Width)

Datasheet:: IRF7342TRPBF.pdf

Description:: MOSFET 2P-CH 55V 3.4A 8-SOIC

In Stock:: 2703

Quantity:: Add To Cart

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IRF7342TRPBF Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
HEXFET®
ProductStatus:
Active
FETType:
2 P-Channel (Dual)
FETFeature:
Logic Level Gate
DraintoSourceVoltage(Vdss):
55V
Current-ContinuousDrain(Id)@25°C:
3.4A
RdsOn(Max)@IdVgs:
105mOhm @ 3.4A, 10V
Vgs(th)(Max)@Id:
1V @ 250µA
GateCharge(Qg)(Max)@Vgs:
38nC @ 10V
InputCapacitance(Ciss)(Max)@Vds:
690pF @ 25V
Power-Max:
2W
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

IRF7342TRPBF this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRF7342TRPBF price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRF7342TRPBF to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IRF7342TRPBF information

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IRF7342TRPBF Typical application Circuitry

The IRF7342TRPBF, from the acclaimed HEXFET® series by International Rectifier, stands as a testament to the advancements in power MOSFET technology. Being a dual P-channel MOSFET, the IRF7342TRPBF offers distinct advantages in terms of power handling and efficiency in compact surface-mount configurations.

1. Source 1 (S1) and Source 2 (S2): Contrary to the more common N-channel MOSFETs, the source terminals (S1 and S2) of the P-channel IRF7342TRPBF often connect to the positive rail of the power supply. This serves as the voltage reference and provides the necessary voltage drop to switch the device on or off.

2. Gate 1 (G1) and Gate 2 (G2): These are the command centers for the respective MOSFETs. They accept control signals that dictate whether the connected MOSFET should conduct or insulate. Given the P-channel nature of the IRF7342TRPBF, pulling the gate voltage below the source voltage switches the device on. Conversely, elevating the gate voltage to the source potential switches the device off. Use gate resistors to stabilize the signals and filter out unintended frequencies or noise.

3. Drain 1 (D1)/Drain 2 (D2): These pins are where the current exits when the MOSFETs are activated. As unique features of the IRF7342TRPBF, the drains of both MOSFETs are internally connected, providing a consolidated output or connection to the next stage or load.

4. Additional Circuit Integration Considerations:

- Pull-Up Resistors: With P-channel MOSFETs like those in the IRF7342TRPBF, it's often recommended to use pull-up resistors on the gate terminals. This ensures that the device remains off until a specific control signal is given.

- Protection Elements: Gate-source voltage spikes can harm the MOSFET. A zener diode between the gate and source can serve as a protection mechanism, limiting the voltage to a safe threshold.

- Thermal Considerations: The IRF7342TRPBF, while efficient, can still produce heat under load. Incorporate heat sinks or thermal pads if the application involves high current loads to prolong the lifespan of the device.

- Review and Verification: After embedding the IRF7342TRPBF into the circuit, it's crucial to test the design under controlled conditions. This will verify the behavior of the MOSFETs and the overall functionality of the integrated circuit.

In summation, the IRF7342TRPBF emerges as a prime choice for applications necessitating efficient P-channel MOSFET operations. As with any semiconductor, due diligence in circuit design, guided by the comprehensive datasheet of the IRF7342TRPBF, ensures that the component operates at its peak and delivers the desired outcomes in the final application.

IRF7342TRPBF FAQ

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6. What is the process for return or replacement of IRF7342TRPBF?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRF7342TRPBF we delivered, we will accept the replacement or return of the IRF7342TRPBF only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRF7342TRPBF.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations