What is the Additional Feature ?

Name: IRF7341TRPBF
Brand: Infineon Technologies
SKU: IRF7341TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IRF7341TRPBF

Part No.:: IRF7341TRPBF

Manufacturer:: Infineon Technologies

Package:: 8-SOIC (0.154, 3.90mm Width)

Datasheet:: IRF7341TRPBF.pdf

Description:: MOSFET 2N-CH 55V 4.7A 8-SOIC

In Stock:: 3612

Quantity:: Add To Cart

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IRF7341TRPBF Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
HEXFET®
ProductStatus:
Active
FETType:
2 N-Channel (Dual)
FETFeature:
Logic Level Gate
DraintoSourceVoltage(Vdss):
55V
Current-ContinuousDrain(Id)@25°C:
4.7A
RdsOn(Max)@IdVgs:
50mOhm @ 4.7A, 10V
Vgs(th)(Max)@Id:
1V @ 250µA
GateCharge(Qg)(Max)@Vgs:
36nC @ 10V
InputCapacitance(Ciss)(Max)@Vds:
740pF @ 25V
Power-Max:
2W
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

IRF7341TRPBF this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRF7341TRPBF price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRF7341TRPBF to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IRF7341TRPBF information

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IRF7341TRPBF Typical application Circuitry

The IRF7341TRPBF, hailing from International Rectifier's HEXFET power MOSFET lineage, encapsulates the excellence of precision engineering in semiconductor technology. Recognized for its high efficiency, reduced footprint, and adaptability, the IRF7341TRPBF is an amalgamation of a dual MOSFET setup, where one channel is P-type and the other is N-type. Integrating such an element within a circuit mandates a thorough understanding of its architecture, ensuring the component's inherent potentials are thoroughly harnessed.

1. Source of P-Channel (S_P): This terminal serves as the P-Channel MOSFET's current source. Often, S_P connects to the positive rail (V+) of the circuit, setting the reference for the P-Channel device.

2. Gate of P-Channel (G_P): G_P manages the conductive state of the P-Channel MOSFET. Connect this terminal to the appropriate drive signal, keeping in mind that the P-Channel conducts when the gate voltage is less than the source voltage.

3. Drain shared by P and N-Channel (D_P/N): A unique aspect of the IRF7341TRPBF is its shared drain configuration. This junction is where the P-Channel and N-Channel MOSFETs converge, and it attaches either to the load or to another circuit stage. It is this consolidated design that allows for more compact and efficient circuit layouts.

4. Gate of N-Channel (G_N): This gate terminal commands the N-Channel MOSFET's conductive state. Link G_N to its corresponding drive signal. Contrary to the P-Channel, the N-Channel becomes conductive when its gate voltage surpasses the source voltage.

5. Source of N-Channel (S_N): S_N serves as the N-Channel's current source. In most scenarios, S_N would tie directly to the circuit's ground, forming the current's return path.

6. Advanced Integration Suggestions:

- Guarding the Gates: A pertinent practice is to include pull-down resistors on the N-Channel gate and pull-up resistors on the P-Channel gate. This measure ensures that the MOSFETs within the IRF7341TRPBF remain non-conductive unless deliberately signaled.

- Protective Diodes: Especially vital in inductive load environments, the integration of flyback diodes shields the IRF7341TRPBF from inductive voltage spikes, thereby prolonging its lifespan.

- Heat Dissipation: Just as any power semiconductor, the IRF7341TRPBF can be susceptible to heat accumulation under hefty loads. As such, implementing suitable heat dissipation mechanisms is pivotal.

- Operational Compliance: To ensure the longevity and optimal performance of the IRF7341TRPBF, always abide by the manufacturer's operational guidelines, especially regarding voltage and current limits.

IRF7341TRPBF FAQ

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6. What is the process for return or replacement of IRF7341TRPBF?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRF7341TRPBF we delivered, we will accept the replacement or return of the IRF7341TRPBF only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRF7341TRPBF.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations