What is the Additional Feature ?

Name: IRF7319TRPBF
Brand: Infineon Technologies
SKU: IRF7319TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IRF7319TRPBF

Part No.:: IRF7319TRPBF

Manufacturer:: Infineon Technologies

Package:: 8-SOIC (0.154, 3.90mm Width)

Datasheet:: IRF7319TRPBF.pdf

Description:: MOSFET N/P-CH 30V 8SOIC

In Stock:: 2288

Quantity:: Add To Cart

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IRF7319TRPBF Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
HEXFET®
ProductStatus:
Active
FETType:
N and P-Channel
FETFeature:
Standard
DraintoSourceVoltage(Vdss):
30V
Current-ContinuousDrain(Id)@25°C:
-
RdsOn(Max)@IdVgs:
29mOhm @ 5.8A, 10V
Vgs(th)(Max)@Id:
1V @ 250µA
GateCharge(Qg)(Max)@Vgs:
33nC @ 10V
InputCapacitance(Ciss)(Max)@Vds:
650pF @ 25V
Power-Max:
2W
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

IRF7319TRPBF this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRF7319TRPBF price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRF7319TRPBF to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IRF7319TRPBF information

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IRF7319TRPBF Typical application Circuitry

The IRF7319TRPBF, a distinguished component from International Rectifier's HEXFET power MOSFET lineup, combines both a P-channel and an N-channel MOSFET in a single package. Designed with cutting-edge technology, the IRF7319TRPBF promises optimized performance, characterized by reduced on-resistance and swift switching attributes. Being a dual complementary MOSFET, the IRF7319TRPBF is an ideal choice for compact and efficient designs. This piece will offer an in-depth exploration of this device, with an emphasis on each pin's function and proper integration into circuits.

1. Source of P-channel (SP): Typically, the SP serves as the power input for the P-channel MOSFET. Depending on the circuit design, it often connects to a positive voltage rail.

2. Gate of P-channel (GP): The GP pin dictates the state of the P-channel MOSFET. When connected to the source voltage (or a voltage close to it), the MOSFET remains off. When driven towards a ground or a lower potential, the MOSFET switches on. Ensure to utilize a gate resistor in line with the GP pin to stabilize the control signal and inhibit unwanted oscillations.

3. Drain of P-channel (DP)/Drain of N-channel (DN): This combined terminal acts as a shared connection point. The DP (of the P-channel) usually connects to the load or another stage in the circuit, while the DN (of the N-channel) serves the same function but for the N-channel MOSFET.

4. Gate of N-channel (GN): Acting as the control interface for the N-channel MOSFET within the IRF7319TRPBF, the GN pin drives the MOSFET. A logic high (relative to the SN) activates the MOSFET, whereas a logic low turns it off. As with the P-channel, it's advisable to use a gate resistor for signal integrity.

5. Source of N-channel (SN): This terminal is the ground or return path for the N-channel MOSFET. In most applications, SN is directly anchored to the system ground.

6. Advanced Implementation Recommendations:

- Stabilizing Gates: Implement pull-down or pull-up resistors, as appropriate, for the gate pins (GP and GN) of the IRF7319TRPBF. This strategy prevents unforeseen activations, especially during system startups or undriven states.

- Protection Protocols: Incorporate zener diodes between the gate and source pins of both MOSFETs to shield against overvoltage transients. This step prolongs the lifespan of the IRF7319TRPBF and ensures safer operations.

- Thermal Insights: Recognizing that power components like the IRF7319TRPBF can produce heat under load, consider using heat sinks or optimizing PCB designs for heat dissipation.

- Reference the Datasheet: The IRF7319TRPBF datasheet is an invaluable resource, detailing electrical and thermal specifications. Consulting it will ensure that the device operates within stipulated limits.

In sum, the IRF7319TRPBF is a versatile component, melding the benefits of both P-channel and N-channel MOSFETs into one. It offers designers a pathway to more efficient and compact electronic designs. Proper understanding and correct integration of this dual complementary MOSFET into circuits are paramount for achieving the best results.

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6. What is the process for return or replacement of IRF7319TRPBF?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRF7319TRPBF we delivered, we will accept the replacement or return of the IRF7319TRPBF only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRF7319TRPBF.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations