What is the Additional Feature ?

Name: IRF7309TRPBF
Brand: Infineon Technologies
SKU: IRF7309TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IRF7309TRPBF

Part No.:: IRF7309TRPBF

Manufacturer:: Infineon Technologies

Package:: 8-SOIC (0.154, 3.90mm Width)

Datasheet:: IRF7309TRPBF.pdf

Description:: MOSFET N/P-CH 30V 4A/3A 8SOIC

In Stock:: 2344

Quantity:: Add To Cart

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IRF7309TRPBF Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
HEXFET®
ProductStatus:
Active
FETType:
N and P-Channel
FETFeature:
Standard
DraintoSourceVoltage(Vdss):
30V
Current-ContinuousDrain(Id)@25°C:
4A, 3A
RdsOn(Max)@IdVgs:
50mOhm @ 2.4A, 10V
Vgs(th)(Max)@Id:
1V @ 250µA
GateCharge(Qg)(Max)@Vgs:
25nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds:
520pF @ 15V
Power-Max:
1.4W
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

IRF7309TRPBF this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRF7309TRPBF price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRF7309TRPBF to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IRF7309TRPBF information

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IRF7309TRPBF Typical application Circuitry

IRF7309TRPBF

The IRF7309TRPBF, heralded from the reputable HEXFET® power MOSFET family by International Rectifier, is a distinctive dual MOSFET integrating both an N-channel and a P-channel device. This adaptable part is designed to provide excellent performance in a variety of settings. The selection of the IRF7309TRPBF for an application ensures space-saving without compromising efficiency. To truly grasp the intricacies of this component, it's imperative to delve into its pin configuration and the principles of integrating it seamlessly into a circuit.

1. Source of P-channel (P-S): This is the pin from which the current exits the P-channel MOSFET when it is switched on. It's typically connected to the positive voltage rail in common circuit configurations.

2. Gate of P-channel (P-G): Serving as the control input for the P-channel MOSFET, this pin's voltage level determines whether the MOSFET is on or off. Depending on the application, connect this pin to a control signal, ensuring it meets the required voltage thresholds to adequately switch the MOSFET.

3. Drain of P-channel and Drain of N-channel (P-D/N-D): This combined pin acts as the output terminal for the P-channel MOSFET and the input terminal for the N-channel MOSFET. Given the complementary nature of the two devices within the IRF7309TRPBF, this shared pin can directly connect to a load or serve as an intermediate node in specific applications.

4. Gate of N-channel (N-G): This pin stands as the control input for the N-channel MOSFET. When the control voltage increases above the threshold voltage, the N-channel MOSFET turns on. Connect this to a control signal that suits the device's specific gate threshold voltage.

5. Source of N-channel (N-S): For the N-channel MOSFET, this pin functions as the ground reference or the return path for the current. It is generally connected to the system's ground or 0V reference.

6. Additional Circuit Integration Insights:

- Gate Drive Considerations: Remember that the P-channel MOSFET turns on when its gate voltage is lower than its source voltage. In contrast, the N-channel MOSFET activates when its gate voltage surpasses its source voltage. Therefore, effective control signals should be applied to P-G and N-G respectively.

- Protection and Stability: Integrating pull-down resistors on both gate pins (P-G and N-G) can prevent accidental turn-on during transitional or undefined states. Also, consider employing a small resistor in series with the gate to suppress potential oscillations.

- Thermal Management: Even though the IRF7309TRPBF boasts of high efficiency, under substantial current operations, heat generation is possible. Employ thermal management strategies, such as heat sinks or thermal pads, when necessary.

In the final analysis, the IRF7309TRPBF is more than just another MOSFET; it's a synergy of complementary devices offering design flexibility. Ensuring accuracy in its integration will reap benefits in both efficiency and circuit compactness. As with any component, rigorous adherence to the datasheet of the IRF7309TRPBF is recommended to obtain its full potential and ensure longevity in any application it's deployed in.

IRF7309TRPBF FAQ

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6. What is the process for return or replacement of IRF7309TRPBF?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRF7309TRPBF we delivered, we will accept the replacement or return of the IRF7309TRPBF only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRF7309TRPBF.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations