What is the Additional Feature ?

Name: IRF7103TRPBF
Brand: Infineon Technologies
SKU: IRF7103TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Infineon Technologies IRF7103TRPBF

Part No.:: IRF7103TRPBF

Manufacturer:: Infineon Technologies

Package:: 8-SOIC (0.154, 3.90mm Width)

Datasheet:: IRF7103TRPBF.pdf

Description:: MOSFET 2N-CH 50V 3A 8-SOIC

In Stock:: 2175

Quantity:: Add To Cart

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IRF7103TRPBF this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including IRF7103TRPBF price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for IRF7103TRPBF to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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IRF7103TRPBF Typical application Circuitry

IRF7103TRPBF

The IRF7103TRPBF, a member of the prolific HEXFET power MOSFET series, is a dual N-channel MOSFET recognized for its efficiency and high-density capability. By achieving low on-resistance per silicon area, this International Rectifier component improves the performance of electronic circuits through the use of sophisticated processing processes. Delving into the specifics of the IRF7103TRPBF requires a meticulous breakdown of its pin structure and detailed guidance on establishing accurate circuit connections.

1. Source 1 (S1) and Source 2 (S2): These are the current-providing terminals for the MOSFETs. S1 and S2 usually connect to the ground (0V) reference of the circuit, ensuring a return path for the current.

2. Gate 1 (G1) and Gate 2 (G2): These pins control the switching operations of the MOSFETs. Connect G1 and G2 to the respective output control signals from the microcontroller or the driving circuit. It is prudent to use gate resistors for maintaining the integrity of the signals and preventing high-frequency oscillations or noise.

3. Drain 1 (D1)/Drain 2 (D2): D1 and D2 serve as the common connection point between the two internal MOSFETs within the IRF7103TRPBF, facilitating the current flow when the devices are on. These pins connect directly to the load or the next stage in the circuit. Their dual functionality as a shared drain conserves space and simplifies the circuit layout.

4. Advanced Circuit Integration Tips:

- Utilizing Pull-Down Resistors: To prevent the MOSFETs from floating into unintended states during power-up or at times when the drive signals are inactive, integrate pull-down resistors on the gate terminals G1 and G2. This approach ensures that the MOSFETs remain in an off state until explicitly activated.

- Gate Protection Methodology: Safeguard the IRF7103TRPBF against potential damage due to high-voltage spikes by integrating a zener diode across the gate and source pins. This setup clamps the voltage, keeping it within the component's specified threshold limits.

- Heat Management: Despite their efficiency, these MOSFETs can generate significant heat during high-current operations. Implement appropriate heat sinking techniques, and consider the ambient temperature to ensure reliable, long-term operation.

- Circuit Testing: After assembly, perform a comprehensive circuit analysis under safe operating conditions to verify the functionality of each MOSFET within the IRF7103TRPBF and the overall performance of the electronic design.

In conclusion, the integration of the IRF7103TRPBF into electronic circuits is a process that combines technical knowledge with precision. This dual N-channel MOSFET package is an invaluable asset in achieving high-efficiency, space-conscious designs. As always, designers should consult the component's datasheet and adhere to recommended electrical parameters and circuit guidelines to ensure optimal performance and longevity of the IRF7103TRPBF in their applications.

IRF7103TRPBF information

IRF7103TRPBF Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
HEXFET®
ProductStatus:
Active
FETType:
2 N-Channel (Dual)
FETFeature:
Standard
DraintoSourceVoltage(Vdss):
50V
Current-ContinuousDrain(Id)@25°C:
3A
RdsOn(Max)@IdVgs:
130mOhm @ 3A, 10V
Vgs(th)(Max)@Id:
3V @ 250µA
GateCharge(Qg)(Max)@Vgs:
30nC @ 10V
InputCapacitance(Ciss)(Max)@Vds:
290pF @ 25V
Power-Max:
2W
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

IRF7103TRPBF FAQ

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3. Are the IRF7103TRPBF price and inventory displayed accurate?

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Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of IRF7103TRPBF?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRF7103TRPBF we delivered, we will accept the replacement or return of the IRF7103TRPBF only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of IRF7103TRPBF.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations