What is the Additional Feature ?

Name: BSS84DWQ-7
Brand: Diodes Incorporated
SKU: BSS84DWQ-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Diodes Incorporated BSS84DWQ-7

Part No.:: BSS84DWQ-7

Manufacturer:: Diodes Incorporated

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: BSS84DWQ-7.pdf

Description:: BSS FAMILY SOT363 T&R 3K

In Stock:: 2115

Quantity:: Add To Cart

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BSS84DWQ-7 Specifications

Packaging:
Tape & Reel (TR)
Series:
Automotive, AEC-Q101
ProductStatus:
Active
FETType:
2 P-Channel (Dual)
FETFeature:
Standard
DraintoSourceVoltage(Vdss):
50V
Current-ContinuousDrain(Id)@25°C:
130mA (Ta)
RdsOn(Max)@IdVgs:
10Ohm @ 100mA, 5V
Vgs(th)(Max)@Id:
2V @ 1mA
GateCharge(Qg)(Max)@Vgs:
-
InputCapacitance(Ciss)(Max)@Vds:
45pF @ 25V
Power-Max:
300mW (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

BSS84DWQ-7 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including BSS84DWQ-7 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for BSS84DWQ-7 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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BSS84DWQ-7 information

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BSS84DWQ-7 Typical application Circuitry

BSS84DWQ-7

The BSS84DWQ-7 is a dual P-channel MOSFET designed for efficient and compact switching applications in electronic circuits. This dual configuration is particularly suitable for space-limited applications where two separate P-channel MOSFETs would typically be required.

Functional Characteristics

Dual P-Channel MOSFET: The BSS84DWQ-7 operates as a dual P-channel MOSFET, ideal for applications requiring compact and efficient high-side switching.

Application Scenarios

In Power Management Circuits: Frequently used in power management systems of electronic devices for efficient voltage regulation.

For Charge Pump Circuits: Suitable for compact charge pump circuits, especially in portable and small-scale electronic devices.

Key Parameters

Efficient Switching: The BSS84DWQ-7 is designed for efficient switching, minimizing power loss and heat generation.

Space-Saving Design: Its dual-MOSFET configuration allows for saving space on PCBs without sacrificing performance.

Circuit Example: Charge Pump Circuit

Objective: Designing a compact charge pump circuit using the BSS84DWQ-7.

Detailed Circuit Implementation

1. Power Source Connection: Begin with a suitable DC power source, such as a 3.3V or 5V supply, depending on the application.

2. First MOSFET Deployment: Connect the drain pin (Pin 1) of the first MOSFET within the BSS84DWQ-7 to the charge pump circuit's input.

3. Control Signal for First MOSFET: Attach a control signal (like a clock signal from a microcontroller) to the gate pin (Pin 2) of the same MOSFET.

4. First MOSFET Source Connection: Link the source pin (Pin 3) to the positive terminal of the power source.

5. Second MOSFET Utilization: Use the second MOSFET in the BSS84DWQ-7 for additional charge pump stages by connecting its drain (Pin 4) to another stage of the circuit.

6. Control Signal for Second MOSFET: Apply a phase-shifted control signal to the gate of the second MOSFET (Pin 5) for effective charge pumping.

Design Considerations

When incorporating the BSS84DWQ-7, consider these factors:

1. Gate Voltage Precision: Ensure the gate voltage is appropriate for activating the MOSFETs without causing damage.

2. Thermal Management: Implement heat dissipation strategies, especially if the MOSFETs are expected to handle high currents.

3. Signal Integrity: Maintain the clarity of control signals for accurate and efficient charge pumping.

4. Load and Source Compatibility: Verify that the circuit's specifications match the operational capacity of the MOSFETs.

5. Circuit Protection: Incorporate protective elements like overcurrent protection for the safety of the MOSFETs and the overall circuit.

6. Parasitic Capacitance Reduction: Design the circuit to minimize parasitic effects, essential for maintaining high-speed performance.

7. Stable Power Supply Utilization: Use a regulated power source to prevent fluctuations impacting the MOSFETs' functionality.

8. Environmental Conditions Consideration: Account for factors like temperature and humidity, which might affect the MOSFETs' efficiency.

In summary, the BSS84DWQ-7 dual P-channel MOSFET is an efficient component, particularly effective in compact applications like charge pumps. Its efficient switching, low on-resistance, and dual configuration make it a valuable choice for modern electronic designs where space efficiency is a key consideration. Key aspects of integration include gate voltage accuracy, thermal management, signal integrity, and protective measures, ensuring optimal performance and reliability.

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6. What is the process for return or replacement of BSS84DWQ-7?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the BSS84DWQ-7 we delivered, we will accept the replacement or return of the BSS84DWQ-7 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of BSS84DWQ-7.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations