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Diodes Incorporated BSS138DWQ-7

Part No.:: BSS138DWQ-7

Manufacturer:: Diodes Incorporated

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: BSS138DWQ-7.pdf

Description:: MOSFET 2NCH 50V 200MA SOT363

In Stock:: 2450

Quantity:: Add To Cart

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BSS138DWQ-7 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
Automotive, AEC-Q101
ProductStatus:
Active
FETType:
2 N-Channel (Dual)
FETFeature:
Standard
DraintoSourceVoltage(Vdss):
50V
Current-ContinuousDrain(Id)@25°C:
200mA
RdsOn(Max)@IdVgs:
3.5Ohm @ 220mA, 10V
Vgs(th)(Max)@Id:
1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs:
-
InputCapacitance(Ciss)(Max)@Vds:
50pF @ 10V
Power-Max:
200mW
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

BSS138DWQ-7 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including BSS138DWQ-7 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for BSS138DWQ-7 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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BSS138DWQ-7 information

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BSS138DWQ-7 Typical application Circuitry

BSS138DWQ-7

The N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) BSS138DWQ-7 is intended for use in a variety of electronic circuits for high-speed switching and signal amplification. The "DWQ-7" in its name likely specifies a version within the BSS138 series, potentially indicating specific electrical characteristics or packaging. N-channel MOSFETs like the BSS138DWQ-7 are known for their efficiency in controlling electrical current, making them suitable for various applications.

Functional Description

Role as N-Channel MOSFET: The BSS138DWQ-7 functions as an N-channel MOSFET, ideal for applications that require rapid switching and efficient signal processing.

Application Scenarios

In Logic Level Conversion: Often used in circuits that need to shift logic levels between different voltage domains, such as interfacing 3.3V and 5V components.

For Driving Small Loads: Utilized in circuits to drive small loads, like LEDs or relays, with precise control.

Key Parameters

Efficient Power Handling: The BSS138DWQ-7 has a low on-resistance, ensuring efficient power handling and minimizing losses.

High-Speed Switching: Its design is tailored for high-speed switching, making it suitable for dynamic electronic applications.

Circuit Example: Logic Level Shifter for Microcontroller Interface

Design Objective: Creating a logic level shifter using the BSS138DWQ-7 for interfacing a 3.3V microcontroller with a 5V sensor.

Detailed Circuit Layout

1. Power Sources Integration: Start with a 3.3V power source for the microcontroller and a 5V source for the sensor.

2. MOSFET Placement: Connect the drain pin (Pin 1) of the BSS138DWQ-7 to the 5V sensor input.

3. Control Signal Connection: Attach the 3.3V logic output from the microcontroller to the gate pin (Pin 2). This signal will control the level shifting.

4. Source Pin Grounding: Link the source pin (Pin 3) to the 3.3V ground, establishing the lower voltage reference.

5. Output Configuration: Interface the drain pin with the 5V sensor, effectively shifting the 3.3V signal to a 5V logic level.

Design Considerations

When designing circuits with the BSS138DWQ-7, focus on these aspects:

1. Appropriate Gate Voltage: Ensure the gate voltage is suitable for the MOSFET's effective operation without causing damage.

2. Thermal Management: Implement heat dissipation measures if the MOSFET is expected to handle high currents.

3. Signal Integrity: Maintain the clarity of the control signal for accurate logic level conversion.

4. Voltage Rating Compatibility: Confirm that the MOSFET's voltage ratings are compatible with the 3.3V and 5V systems.

5. Circuit Protection: Incorporate protective elements like overcurrent protection to enhance the safety of the MOSFET and connected components.

6. Minimizing Parasitic Effects: Design the circuit layout to reduce parasitic capacitance and inductance, crucial for maintaining high-speed performance.

7. Stable Power Sources: Use regulated power sources to prevent fluctuations that could impact the MOSFET's functionality.

8. Environmental Adaptability: Consider operating conditions like temperature and humidity, which might affect the MOSFET's performance.

In summary, the BSS138DWQ-7 N-channel MOSFET is an efficient component, particularly effective for applications like logic level shifting in mixed-voltage systems. Its low on-resistance and fast-switching capabilities make it a valuable choice for modern electronic designs. Key considerations for circuit integration include gate voltage accuracy, thermal management, signal integrity, and protective measures, ensuring optimal performance and reliability.

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6. What is the process for return or replacement of BSS138DWQ-7?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of BSS138DWQ-7.

(3)The PartNo is unused and only in the original unpacked packaging.

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