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Diodes Incorporated BSS138DWQ-13

Part No.:: BSS138DWQ-13

Manufacturer:: Diodes Incorporated

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: BSS138DWQ-13.pdf

Description:: MOSFET 2NCH 50V 200MA SOT363

In Stock:: 3163

Quantity:: Add To Cart

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BSS138DWQ-13 Specifications

Packaging:
Tape & Reel (TR)
Series:
Automotive, AEC-Q101
ProductStatus:
Active
FETType:
2 N-Channel (Dual)
FETFeature:
Standard
DraintoSourceVoltage(Vdss):
50V
Current-ContinuousDrain(Id)@25°C:
200mA
RdsOn(Max)@IdVgs:
3.5Ohm @ 220mA, 10V
Vgs(th)(Max)@Id:
1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs:
-
InputCapacitance(Ciss)(Max)@Vds:
50pF @ 10V
Power-Max:
200mW
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

BSS138DWQ-13 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including BSS138DWQ-13 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for BSS138DWQ-13 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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BSS138DWQ-13 information

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BSS138DWQ-13 Typical application Circuitry

BSS138DWQ-13

The BSS138DWQ-13 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), a component widely used for high-speed switching and signal amplification in electronic circuits. The "DWQ-13" designation likely specifies a particular variant within the BSS138 series, possibly indicating specific packaging, electrical characteristics, or performance criteria. N-channel MOSFETs like the BSS138DWQ-13 are essential in various applications due to their efficiency in controlling electrical current flow.

Functional Attributes

Role as N-Channel MOSFET: The BSS138DWQ-13 functions as an N-channel MOSFET, optimized for applications requiring rapid switching and effective signal handling.

Application Scenarios

In Logic Level Conversion: Frequently used for converting logic levels in mixed-voltage digital systems.

For Driving Small Motors: Common in circuits driving small motors or relays, where efficient current control is needed.

Key Parameters

Efficient Current Handling: The BSS138DWQ-13's low on-resistance ensures minimal power loss and efficient current management.

High-Speed Switching: Designed for rapid switching, making it well-suited for dynamic electronic applications.

Circuit Example: Logic Level Conversion

Objective: Designing a logic level conversion circuit for interfacing a 3.3V microcontroller with a 5V digital system using the BSS138DWQ-13.

Detailed Circuit Construction

1. Dual Power Source Integration: Begin with two power sources, 3.3V for the microcontroller and 5V for the digital system.

2. MOSFET Placement: Implement the BSS138DWQ-13 by connecting its drain pin (Pin 1) to the 5V system.

3. Control Signal Application: Attach the 3.3V signal from the microcontroller to the gate pin (Pin 2). This signal will control the level conversion process.

4. Source Pin Grounding: Link the source pin (Pin 3) to the 3.3V ground, establishing the lower voltage reference.

5. Output Configuration: Connect the drain pin to the 5V digital system's input, effectively shifting the 3.3V signal to a 5V level.

Design Considerations

When designing circuits with the BSS138DWQ-13, consider these factors:

1. Appropriate Gate Voltage: Ensure the gate voltage is suitable for effective MOSFET operation without overloading.

2. Heat Dissipation: Implement heat management strategies if the MOSFET is expected to handle high currents.

3. Signal Clarity: Preserve the integrity of the control signal for accurate logic level conversion.

4. Voltage Compatibility: Confirm that the MOSFET's voltage ratings align with both the 3.3V and 5V systems.

5. Circuit Protection: Incorporate protection elements to safeguard the MOSFET and connected components.

6. Minimizing Parasitic Effects: Design the circuit to reduce parasitic capacitance and inductance, crucial for high-speed switching.

7. Power Supply Stability: Use regulated power sources to prevent fluctuations that could impact the MOSFET's function.

8. Environmental Considerations: Account for operating conditions like temperature and humidity, which might affect MOSFET efficiency.

In summary, the BSS138DWQ-13 N-channel MOSFET is an efficient component, particularly effective for applications like logic level conversion in mixed-voltage digital systems. Its low on-resistance and fast-switching capabilities make it a valuable choice for modern electronic designs. Key considerations for circuit integration include gate voltage accuracy, thermal management, signal integrity, and protective measures, ensuring optimal performance and reliability.

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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