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Diodes Incorporated BSS138DWK-7

Part No.:: BSS138DWK-7

Manufacturer:: Diodes Incorporated

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: BSS138DWK-7.pdf

Description:: MOSFET BVDSS: 41V~60V SOT363 T&R

In Stock:: 3474

Quantity:: Add To Cart

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BSS138DWK-7 Specifications

Packaging:
Tape & Reel (TR)
Series:
-
ProductStatus:
Active
FETType:
2 N-Channel (Dual)
FETFeature:
Standard
DraintoSourceVoltage(Vdss):
50V
Current-ContinuousDrain(Id)@25°C:
310mA (Ta)
RdsOn(Max)@IdVgs:
2.6Ohm @ 200mA, 10V
Vgs(th)(Max)@Id:
1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs:
0.8nC @ 10V
InputCapacitance(Ciss)(Max)@Vds:
22pF @ 25V
Power-Max:
330mW
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

BSS138DWK-7 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including BSS138DWK-7 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for BSS138DWK-7 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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BSS138DWK-7 information

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BSS138DWK-7 Typical application Circuitry

BSS138DWK-7

The N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) BSS138DWK-7 is intended for use in electronic circuits for high-speed switching and signal amplification. The "DWK-7" designation likely specifies a variant within the BSS138 series, possibly indicating a particular form factor, packaging, or electrical specification. N-channel MOSFETs like the BSS138DWK-7 are essential in various applications for their efficiency in controlling electrical current.

Functional Characteristics

N-Channel MOSFET Role: The BSS138DWK-7 operates as an N-channel MOSFET, making it ideal for applications that require quick switching and efficient signal handling.

Application Scenarios

In Digital Interface Circuits: Commonly used in digital interface circuits for controlling and switching logic levels.

For Charging Control: Employed in charging circuits for battery-powered devices, providing efficient power management.

Key Parameters

Efficient Electrical Conductance: The BSS138DWK-7's low on-resistance allows for efficient electrical conductance, minimizing power losses.

Rapid Switching Capability: Designed for high-speed switching, this MOSFET is suitable for applications needing quick signal modulation.

Circuit Example: Digital Interface for a Microcontroller

Objective: Designing a digital interface circuit for a microcontroller using the BSS138DWK-7.

Detailed Circuit Design

1. Power Source Connection: Connect a stable power source suitable for the microcontroller's operating voltage, such as 5V.

2. MOSFET Integration: Implement the BSS138DWK-7 by connecting its drain pin (Pin 1) to the digital input/output of the microcontroller.

3. Control Signal Configuration: Attach a control signal from the microcontroller to the gate pin (Pin 2) of the BSS138DWK-7 to manage digital switching.

4. Source Pin Grounding: Link the source pin (Pin 3) of the BSS138DWK-7 to the circuit's ground, completing the current path.

5. Output and Load Setup: Interface the drain pin with the target digital component (e.g., an LED, sensor, or another digital module), ensuring efficient signal transmission.

Design Considerations

When incorporating the BSS138DWK-7, these factors should be considered:

1. Gate Voltage Suitability: Ensure the gate voltage is appropriate to fully activate the MOSFET without causing damage.

2. Thermal Management: Implement heat dissipation measures, especially if the MOSFET is expected to handle high currents.

3. Signal Integrity Maintenance: In digital interfaces, maintaining the clarity and integrity of the control signal is vital for accurate operation.

4. Load Compatibility: Verify that the load's electrical characteristics match the MOSFET's operational capacity.

5. Circuit Protection Strategies: Include elements like overcurrent protection to enhance the safety and longevity of the MOSFET and connected components.

6. Parasitic Capacitance Minimization: Design the layout to reduce parasitic effects, crucial for maintaining performance in high-speed applications.

7. Stable Power Supply: Utilize a regulated power source to prevent voltage fluctuations that could impact the MOSFET's functionality.

8. Environmental Adaptability: Consider the operating environment, as factors like temperature and humidity can affect the MOSFET's performance.

In summary, the BSS138DWK-7 N-channel MOSFET is a versatile and efficient component, particularly effective for applications like digital interfacing in microcontroller-based systems. Its low on-resistance and fast-switching capabilities make it a valuable choice in modern electronic designs. Key considerations for circuit integration include gate voltage precision, thermal management, signal integrity, and protective measures to ensure optimal performance and reliability.

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6. What is the process for return or replacement of BSS138DWK-7?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of BSS138DWK-7.

(3)The PartNo is unused and only in the original unpacked packaging.

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