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Diodes Incorporated BSS138DW-7-F-79

Part No.:: BSS138DW-7-F-79

Manufacturer:: Diodes Incorporated

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:

Description:: DIODE

In Stock:: 3797

Quantity:: Add To Cart

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BSS138DW-7-F-79 Specifications

Packaging:
Bulk
Series:
-
ProductStatus:
Obsolete
FETType:
2 N-Channel (Dual)
FETFeature:
Standard
DraintoSourceVoltage(Vdss):
50V
Current-ContinuousDrain(Id)@25°C:
200mA (Ta)
RdsOn(Max)@IdVgs:
3.5Ohm @ 220mA, 10V
Vgs(th)(Max)@Id:
1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs:
-
InputCapacitance(Ciss)(Max)@Vds:
50pF @ 10V
Power-Max:
200mW (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

BSS138DW-7-F-79 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including BSS138DW-7-F-79 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for BSS138DW-7-F-79 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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BSS138DW-7-F-79 information

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BSS138DW-7-F-79 Typical application Circuitry

BSS138DW-7-F-79

BSS138DW-7-F-79 is a specialized version of the BSS138, an N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor). This particular model is designed for high-speed switching applications in electronic circuits. The additional designation "-7-F-79" may designate packaging, manufacturing standards, or specific performance characteristics. This type of N-channel MOSFET is widely used due to its efficiency in controlling electric current in various applications.

Functional Characteristics

N-Channel MOSFET Role: The BSS138DW-7-F-79 serves as an N-channel MOSFET, ideal for applications requiring rapid switching and efficient signal processing.

Application Scenarios

In Power Management Systems: Commonly used in power management systems, particularly in portable devices for efficient power flow control.

For Driving LEDs: Employed in LED driving circuits, where precise control of current is necessary for consistent brightness.

Key Parameters

Effective Current Management: The MOSFET's low on-resistance is key for efficient handling of current, minimizing power loss.

High-Speed Switching Capability: Designed for rapid switching, making it suitable for dynamic electronic applications.

Circuit Example: LED Driver Circuit

Design Objective: Constructing an LED driver circuit using the BSS138DW-7-F-79.

Detailed Circuit Layout

1. Power Source Connection: Start by connecting a suitable DC power source, appropriate for the LEDs' voltage requirements.

2. MOSFET Integration: Implement the BSS138DW-7-F-79 by connecting its drain pin (Pin 1) to the anode of the LED.

3. Control Signal Setup: Attach a control signal (from a PWM controller or microcontroller) to the gate pin (Pin 2). This signal will regulate the LED's brightness.

4. Source Pin Grounding: Link the source pin (Pin 3) to the circuit's common ground, ensuring a complete path for the current.

5. Load and Protection Configuration: Connect the cathode of the LED to the ground and include a current-limiting resistor in series with the LED for overcurrent protection.

Design Considerations

When designing circuits with the BSS138DW-7-F-79, focus on these factors:

1. Gate Voltage Optimization: Ensure the gate voltage is correctly set for the MOSFET's effective operation without overloading.

2. Heat Dissipation Management: Implement heat management solutions if the MOSFET is to handle high currents continuously.

3. Signal Integrity Preservation: Maintain the integrity of the control signal, especially in PWM applications, for accurate LED brightness control.

4. Load Compatibility: Verify that the LED's specifications align with the MOSFET's operational capabilities.

5. Circuit Protection Implementation: Include elements like overcurrent protection to safeguard both the MOSFET and the LED.

6. Parasitic Capacitance Minimization: Design the layout to reduce parasitic effects, crucial for maintaining performance in high-speed switching.

7. Power Supply Stability: Use a regulated power source to prevent fluctuations that could impact the MOSFET's function.

8. Environmental Adaptability: Consider operating conditions like temperature and humidity, which might affect the MOSFET's efficiency.

In summary, the BSS138DW-7-F-79 N-channel MOSFET is a versatile and efficient component, particularly effective for applications like LED driving and power management in portable devices. Its low on-resistance and rapid switching capabilities make it a valuable choice in advanced electronic designs. Key considerations for circuit integration include gate voltage precision, thermal management, signal integrity, and protective measures, ensuring optimal performance and reliability.

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6. What is the process for return or replacement of BSS138DW-7-F-79?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of BSS138DW-7-F-79.

(3)The PartNo is unused and only in the original unpacked packaging.

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