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Diodes Incorporated BSS138DW-7-F

Part No.:: BSS138DW-7-F

Manufacturer:: Diodes Incorporated

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: BSS138DW-7-F.pdf

Description:: MOSFET 2N-CH 50V 0.2A SC70-6

In Stock:: 3288

Quantity:: Add To Cart

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BSS138DW-7-F Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
-
ProductStatus:
Active
FETType:
2 N-Channel (Dual)
FETFeature:
Logic Level Gate
DraintoSourceVoltage(Vdss):
50V
Current-ContinuousDrain(Id)@25°C:
200mA
RdsOn(Max)@IdVgs:
3.5Ohm @ 220mA, 10V
Vgs(th)(Max)@Id:
1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs:
-
InputCapacitance(Ciss)(Max)@Vds:
50pF @ 10V
Power-Max:
200mW
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

BSS138DW-7-F this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including BSS138DW-7-F price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for BSS138DW-7-F to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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BSS138DW-7-F information

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BSS138DW-7-F Typical application Circuitry

BSS138DW-7-F

The BSS138DW-7-F is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), designed primarily for high-speed switching applications in electronic circuits. The "DW-7-F" in its designation suggests a specific model within the BSS138 series, possibly indicating a particular form factor or packaging, with the "F" often signifying compliance with lead-free manufacturing standards. N-channel MOSFETs like the BSS138DW-7-F are known for their efficiency in controlling electrical current, making them suitable for a variety of applications.

Functional Role

N-Channel MOSFET: The BSS138DW-7-F functions as an N-channel MOSFET, optimized for applications requiring quick switching and efficient signal processing.

Application Scenarios

In Logic Level Conversion: Frequently used in circuits that require shifting logic levels between different voltage domains.

For Driving Small Loads: Commonly employed in circuits to drive small loads such as LEDs or relays.

Key Parameters

Efficient Electrical Conductance: The BSS138DW-7-F's low on-resistance allows for efficient electrical conductance, minimizing power losses.

Fast Switching Capability: Designed for high-speed switching, making it suitable for applications that need rapid signal modulation.

Circuit Example: Logic Level Shifter

Objective: Designing a logic level shifter using the BSS138DW-7-F for interfacing a 3.3V microcontroller with a 5V digital system.

Detailed Circuit Design

1. Dual Voltage Source Integration: Start with a 3.3V power source for the microcontroller and a 5V power source for the digital system.

2. MOSFET Placement: Connect the drain pin (Pin 1) of the BSS138DW-7-F to the 5V system.

3. Control Signal Application: Attach the 3.3V logic signal from the microcontroller to the gate pin (Pin 2). This will control the level shifting process.

4. Source Pin Grounding: Link the source pin (Pin 3) to the 3.3V ground, establishing the lower voltage reference.

5. Output Configuration: Connect the drain pin to the 5V digital system input, achieving the conversion from 3.3V to 5V signal levels.

Design Considerations

When designing circuits with the BSS138DW-7-F, consider these factors:

1. Gate Voltage Appropriateness: Ensure the gate voltage is suitable for the MOSFET's effective operation without overloading.

2. Thermal Management: Implement heat dissipation strategies if the MOSFET is expected to handle high currents.

3. Signal Integrity: Maintain the clarity of the control signal for accurate logic level conversion.

4. Voltage Compatibility: Confirm that the MOSFET's voltage ratings align with both the 3.3V and 5V systems.

5. Circuit Protection: Incorporate protective elements like overcurrent protection to enhance the safety of the MOSFET and connected components.

6. Minimizing Parasitic Effects: Design the circuit layout to reduce parasitic capacitance and inductance, crucial for maintaining high-speed performance.

7. Stable Power Sources: Use regulated power sources to prevent fluctuations that could impact the MOSFET's functionality.

8. Environmental Adaptability: Factor in operating conditions such as temperature and humidity, which might affect the MOSFET's performance.

In summary, the BSS138DW-7-F N-channel MOSFET is an efficient component, particularly effective for applications like logic level shifting in mixed-voltage digital systems. Its low on-resistance and fast-switching capabilities make it a valuable choice in modern electronic designs. Key considerations for circuit integration include gate voltage accuracy, thermal management, signal integrity, and protective measures, ensuring optimal performance and reliability.

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of BSS138DW-7-F.

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