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Micro Commercial Co BSS138AKDW-TP

Part No.:: BSS138AKDW-TP

Manufacturer:: Micro Commercial Co

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: BSS138AKDW-TP.pdf

Description:: DUAL N-CHANNEL MOSFET, SOT-363

In Stock:: 3399

Quantity:: Add To Cart

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BSS138AKDW-TP Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
-
ProductStatus:
Active
FETType:
2 N-Channel (Dual)
FETFeature:
Standard
DraintoSourceVoltage(Vdss):
50V
Current-ContinuousDrain(Id)@25°C:
220mA
RdsOn(Max)@IdVgs:
3Ohm @ 500mA, 10V
Vgs(th)(Max)@Id:
1.45V @ 250µA
GateCharge(Qg)(Max)@Vgs:
-
InputCapacitance(Ciss)(Max)@Vds:
22800pF @ 25V
Power-Max:
350mW
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

BSS138AKDW-TP this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including BSS138AKDW-TP price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for BSS138AKDW-TP to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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BSS138AKDW-TP information

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BSS138AKDW-TP Typical application Circuitry

BSS138AKDW-TP

In several electronic circuits, the N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) BSS138AKDW-TP is commonly utilized for high-speed switching and signal amplification. The "AKDW-TP" part of its name suggests a specific variant within the BSS138 MOSFET family, possibly indicating a particular packaging or performance standard. N-channel MOSFETs like the BSS138AKDW-TP are valued for their ability to efficiently control electrical current, making them suitable for a wide range of applications.

Functional Characteristics

N-Channel MOSFET Role: The BSS138AKDW-TP functions as an N-channel MOSFET, optimized for rapid switching and effective signal processing in electronic circuits.

Application Scenarios

In Level Shifting Applications: Frequently used for level shifting in mixed-voltage digital systems, such as interfacing 3.3V and 5V logic levels.

For Power Management: Common in power management circuits, particularly in portable and compact electronic devices.

Key Parameters

Efficient Current Handling: The low on-resistance of the BSS138AKDW-TP ensures minimal power loss and high efficiency in current management.

High-Speed Switching: Designed for rapid switching, making it well-suited for dynamic electronic applications.

Circuit Example: Level Shifter for Mixed-Voltage Systems

Objective: Creating a level shifter circuit using the BSS138AKDW-TP for a mixed-voltage digital system.

Detailed Circuit Design

1. Dual Voltage Source Setup: Begin with two different voltage sources – a 3.3V source for low-level logic and a 5V source for high-level logic.

2. MOSFET Integration: Connect the drain pin (Pin 1) of the BSS138AKDW-TP to the 5V logic level line.

3. Input Signal Application: Attach the 3.3V logic signal to the gate pin (Pin 2). This signal will control the level shifting process.

4. Source Pin Grounding: Connect the source pin (Pin 3) of the BSS138AKDW-TP to the 3.3V ground, establishing a reference for the lower voltage level.

5. Output Connection: Link the drain pin to the 5V logic input, effectively converting the 3.3V signal to a 5V logic level.

Design Considerations

When designing circuits with the BSS138AKDW-TP, consider the following:

1. Gate Voltage Appropriateness: Ensure the gate voltage is suitable for the MOSFET's operation without overloading.

2. Thermal Management: Implement heat dissipation measures if the MOSFET is expected to handle high currents.

3. Signal Clarity: Maintain the integrity of the control signal for accurate logic level conversion.

4. Voltage Rating Compatibility: Ensure the MOSFET's voltage ratings align with the 3.3V and 5V systems.

5. Circuit Protection: Incorporate protective elements like overcurrent protection to safeguard the MOSFET and connected components.

6. Minimizing Parasitic Effects: Design the circuit layout to reduce parasitic capacitance and inductance, crucial for maintaining high-speed performance.

7. Stable Power Source Utilization: Use regulated power sources to prevent fluctuations that could impact the MOSFET's function.

8. Environmental Adaptability: Take into account variables that could impact the performance of the MOSFET, such as humidity and temperature.

In summary, the BSS138AKDW-TP N-channel MOSFET is an efficient component, particularly effective for applications like level shifting in mixed-voltage digital systems. Its low on-resistance and high-speed switching capabilities make it a valuable choice for modern electronic designs. Key considerations for circuit integration include gate voltage precision, thermal management, signal integrity, and protective measures to ensure optimal performance and reliability.

BSS138AKDW-TP FAQ

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6. What is the process for return or replacement of BSS138AKDW-TP?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the BSS138AKDW-TP we delivered, we will accept the replacement or return of the BSS138AKDW-TP only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of BSS138AKDW-TP.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations