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Diodes Incorporated 2N7002DWQ-13-F

Part No.:: 2N7002DWQ-13-F

Manufacturer:: Diodes Incorporated

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: 2N7002DWQ-13-F.pdf

Description:: 2N7002 FAMILY SOT363 T&R 10K

In Stock:: 2342

Quantity:: Add To Cart

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2N7002DWQ-13-F Specifications

Packaging:
Tape & Reel (TR)
Series:
Automotive, AEC-Q101
ProductStatus:
Active
FETType:
2 N-Channel (Dual)
FETFeature:
Standard
DraintoSourceVoltage(Vdss):
60V
Current-ContinuousDrain(Id)@25°C:
230mA (Ta)
RdsOn(Max)@IdVgs:
7.5Ohm @ 50mA, 5V
Vgs(th)(Max)@Id:
2V @ 250µA
GateCharge(Qg)(Max)@Vgs:
-
InputCapacitance(Ciss)(Max)@Vds:
50pF @ 25V
Power-Max:
310mW (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

2N7002DWQ-13-F this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including 2N7002DWQ-13-F price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for 2N7002DWQ-13-F to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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2N7002DWQ-13-F information

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2N7002DWQ-13-F Typical application Circuitry

The 2N7002DWQ-13-F is an advanced iteration within the 2N7002 series, featuring a dual N-channel MOSFET configuration tailored for precision power switching applications. Encased in a SOT-363 package, this model is distinguished by its "-13-F" suffix, indicating its form factor and the incorporation of lead (Pb)-free, environmentally friendly materials. This component is designed to enhance the efficiency and reliability of power management systems across a diverse array of electronic devices, making it particularly suitable for space-constrained environments where dual-channel functionality is required.

1. Dual N-Channel MOSFET Innovation: The essence of the 2N7002DWQ-13-F lies in its two N-channel MOSFETs, integrated within a single component. This design enables the simultaneous control of two independent circuits, facilitating compact and efficient circuit layouts by minimizing the need for additional components.

2. Detailed Pin Configuration: The SOT-363 packaging of the 2N7002DWQ-13-F comprises six meticulously arranged pins. These include Gate1 (G1) and Gate2 (G2) for the control inputs, Drain1 (D1) and Drain2 (D2) serving as the outputs, and Source1 (S1) and Source2 (S2), which are tied to the common ground. This arrangement underscores the need for careful planning in circuit design to optimize the MOSFETs' performance and prevent electrical interference between channels.

3. Circuit Integration Approach: To effectively incorporate the 2N7002DWQ-13-F into an electronic design, it is crucial to connect the drain pins to their respective loads, ensuring that the source pins are grounded to establish a reliable return path. The gate pins must receive precise voltage levels to switch the MOSFETs on and off, requiring diligent control to stay within the device's specified voltage thresholds.

4. Optimal Operational Practices: Maintaining the 2N7002DWQ-13-F within its recommended electrical limits, including the maximum drain-source voltage (V_DS), gate-source voltage (V_GS), and drain current (I_D), is vital for the longevity and reliability of the device. Effective thermal management is also essential, especially when operating at higher currents, to ensure stable performance and prevent thermal overload.

5. Enhanced Performance Design Tips: Deploying decoupling capacitors near the power supply connections and routing gate control signals with care can significantly bolster the 2N7002DWQ-13-F's efficiency. Such strategies are instrumental in stabilizing the voltage supply, minimizing electrical noise, and optimizing the switching speed of the MOSFETs.

6. Broad Application Spectrum: The 2N7002DWQ-13-F's dual-channel capability and compact form factor make it an exemplary choice for a wide range of applications, including but not limited to, power regulation systems, digital switching networks, and precision control mechanisms. Its design affords significant advantages in terms of space economy and functionality, allowing for innovative solutions in electronic system design.

In conclusion, the 2N7002DWQ-13-F exemplifies state-of-the-art MOSFET technology, offering dual-channel capabilities within a space-efficient package. Its adoption in electronic systems necessitates a nuanced understanding of its pinout, operational guidelines, and thermal management considerations. By effectively leveraging the 2N7002DWQ-13-F, designers can achieve highly efficient, environmentally conscious, and space-saving electronic solutions.

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6. What is the process for return or replacement of 2N7002DWQ-13-F?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of 2N7002DWQ-13-F.

(3)The PartNo is unused and only in the original unpacked packaging.

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