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ON Semiconductor 2N7002DW-G

Part No.:: 2N7002DW-G

Manufacturer:: ON Semiconductor

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:

Description:: MOSFET 2N-CH 60V 0.115A SC88-6

In Stock:: 3580

Quantity:: Add To Cart

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2N7002DW-G Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
-
ProductStatus:
Active
FETType:
2 N-Channel (Dual)
FETFeature:
Standard
DraintoSourceVoltage(Vdss):
60V
Current-ContinuousDrain(Id)@25°C:
115mA (Ta)
RdsOn(Max)@IdVgs:
2Ohm @ 500mA, 10V
Vgs(th)(Max)@Id:
2V @ 250µA
GateCharge(Qg)(Max)@Vgs:
-
InputCapacitance(Ciss)(Max)@Vds:
50pF @ 25V
Power-Max:
200mW (Ta)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount

2N7002DW-G this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including 2N7002DW-G price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for 2N7002DW-G to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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2N7002DW-G information

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2N7002DW-G Typical application Circuitry

The 2N7002DW-G is part of the expansive 2N7002 series, characterized by its dual N-channel MOSFET configuration. This specific variant is designed to provide efficient, high-speed switching capabilities within a very small footprint, thanks to its encapsulation in a SOT-363 package. The "-G" suffix typically indicates that the device is manufactured with a lead (Pb)-free, "green" process, aligning with contemporary environmental standards for electronic components. The 2N7002DW-G excels in applications requiring compact, efficient power management solutions, such as portable electronics, power supply circuits, and digital switching systems.

1. Dual N-Channel MOSFET Features: The core functionality of the 2N7002DW-G lies in its dual N-channel MOSFET design, which allows for the control of two separate electrical circuits within a single device. This capability is particularly beneficial for designs aiming to reduce space and increase circuit efficiency by managing multiple paths of current flow.

2. Pin Configuration and Functions: The SOT-363 package of the 2N7002DW-G includes six pins, meticulously arranged to optimize circuit design. The configuration comprises Gate1 (G1) and Gate2 (G2) for the input control signals, Drain1 (D1) and Drain2 (D2) as the output terminals for the MOSFETs, and Source1 (S1) and Source2 (S2) which are connected to the common ground or return path. This arrangement necessitates a strategic approach to circuit design to maximize the device's functionality and prevent unintended electrical interactions.

3. Incorporation into Circuit Designs: Effective integration of the 2N7002DW-G into an electronic system involves connecting the drain pins to the intended loads while grounding the source pins to establish a common return path. The gate pins require precise voltage control to toggle the MOSFETs' conducting state, necessitating careful voltage level management to avoid exceeding the device's specified limits.

4. Guidelines for Optimal Operation: Operating the 2N7002DW-G within its specified parameters, including the maximum ratings for drain-source voltage, gate-source voltage, and continuous drain current, is crucial for maintaining device integrity and ensuring longevity. Adequate thermal management is also essential, particularly when the device operates at high currents, to facilitate effective heat dissipation and maintain operational stability.

5. Design Recommendations for Enhanced Performance: Incorporating decoupling capacitors near the power supply pins and meticulously routing gate signals can significantly improve the 2N7002DW-G's performance. These measures help stabilize the power supply, minimize noise, and reduce switching delays, thereby enhancing the overall efficiency and reliability of the MOSFETs.

6. Versatile Application Potential: The dual-channel design and compact size of the 2N7002DW-G make it an ideal choice for a wide range of applications, from digital logic circuits and power regulation to more complex systems requiring precise control over multiple power paths. Its ability to manage two circuits with a single component provides significant advantages in terms of design flexibility and efficiency.

In essence, the 2N7002DW-G represents a sophisticated solution for modern electronic designs that require dual-channel MOSFET functionality within a minimal space. Its integration into electronic systems demands a comprehensive understanding of its pin configuration, operational guidelines, and thermal management considerations. By leveraging the 2N7002DW-G's capabilities, designers can achieve highly efficient, compact, and environmentally friendly electronic solutions.

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6. What is the process for return or replacement of 2N7002DW-G?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the 2N7002DW-G we delivered, we will accept the replacement or return of the 2N7002DW-G only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of 2N7002DW-G.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations