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Name: 2N7002BKV,115
Brand: Nexperia USA Inc.
SKU: 2N7002BKV,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Nexperia USA Inc. 2N7002BKV,115

Part No.:: 2N7002BKV,115

Manufacturer:: Nexperia USA Inc.

Package:: SOT-563, SOT-666

Datasheet:: 2N7002BKV,115.pdf

Description:: MOSFET 2N-CH 60V 340MA SOT666

In Stock:: 3257

Quantity:: Add To Cart

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2N7002BKV,115 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
Automotive, AEC-Q101, TrenchMOS™
ProductStatus:
Not For New Designs
FETType:
2 N-Channel (Dual)
FETFeature:
Logic Level Gate
DraintoSourceVoltage(Vdss):
60V
Current-ContinuousDrain(Id)@25°C:
340mA
RdsOn(Max)@IdVgs:
1.6Ohm @ 500mA, 10V
Vgs(th)(Max)@Id:
2.1V @ 250µA
GateCharge(Qg)(Max)@Vgs:
0.6nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds:
50pF @ 10V
Power-Max:
350mW
OperatingTemperature:
150°C (TJ)
MountingType:
Surface Mount

2N7002BKV,115 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including 2N7002BKV,115 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for 2N7002BKV,115 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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2N7002BKV,115 information

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2N7002BKV,115 Typical application Circuitry

2N7002BKV,115

The 2N7002BKV,115 is a natural component of the wide range of electronic parts. It is an N-channel enhancement-mode Field-Effect Transistor (FET), to be more precise. This type of FET is often incorporated into circuits to efficiently manage switching operations or modulate signals.

Usual Deployments of 2N7002BKV,115:

1. Regulating power within compact or battery-powered apparatuses.

2. Facilitating digital signal switching.

3. The 2N7002BKV,115 proves instrumental in interfacing tasks, such as level shifting.

4. Amplification and modulation of analog signals.

Distinct Features of 2N7002BKV,115:

1. Drain-Source Voltage (Vds) that generally peaks at around 60V.

2. Drain Current (Id) hovers in the ballpark of 300mA.

3. Gate Threshold Voltage (Vgs(th)) that spans from roughly 1V to 2.5V.

4. Renowned for its nimble switching capabilities.

5. Notable for its impressively low on-resistance (Rds(on)).

Illustrative Application: Power Management in Portable Devices

Imagine harnessing the 2N7002BKV,115 in a portable gadget to regulate the power flow to a specific module, like a sensor.

Pin Assignments:

- The Source terminal of the 2N7002BKV,115 is ideally connected to the device's ground.

- The Drain terminal is aligned to the power input of the said module or sensor.

Driving Mechanism:

- A microcontroller or another control circuit transmits signals to the 2N7002BKV,115. The Gate of this FET is where this signal enters. A HIGH signal will enable the sensor, while a LOW will disable it.

Gate Strategy:

- To preempt any unforeseen activations when the control signal is ambiguous, it's pragmatic to include a pull-down resistor (perhaps a 10k ohms unit) that binds the Gate to the ground. This setup ensures the 2N7002BKV,115 is dormant unless deliberately triggered.

Sensor Power:

- When the 2N7002BKV,115 is active, it essentially creates a conduit for power to flow from the battery or power source to the sensor through the Drain.

Key Design Considerations:

- Voltage Guardrails: It's paramount to remain within the stipulated Drain-Source and Gate-Source voltage thresholds of the 2N7002BKV,115. Exceeding these can spell doom for the component.

- Heat Dynamics: The 2N7002BKV,115, although sculpted for low-power domains, can still generate heat under duress. Crafting a heat management strategy is often sagacious.

- Static Caution: The bane of most MOSFETs, including the 2N7002BKV,115, is Electrostatic Discharge (ESD). Always ensure you're adhering to ESD-safe procedures during handling and integration.

- Parasitic Elements: Especially with the 2N7002BKV,115, it's wise to be mindful of unintentional parasitic capacitances and inductances during the design phase, as these can impact performance.

To encapsulate, the 2N7002BKV,115 stands out as an exemplar MOSFET tailored for a diverse array of electronic pursuits. When its quintessential traits are married with meticulous design practices, it promises robust performance across its designated applications.

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6. What is the process for return or replacement of 2N7002BKV,115?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of 2N7002BKV,115.

(3)The PartNo is unused and only in the original unpacked packaging.

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