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Name: PD55015TR-E
Brand: STMicroelectronics
SKU: PD55015TR-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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STMicroelectronics PD55015TR-E

Part No.:: PD55015TR-E

Manufacturer:: STMicroelectronics

Package:: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

Datasheet:: PD55015TR-E.pdf

Description:: TRANS RF N-CH FET POWERSO-10RF

In Stock:: 2876

Quantity:: Add To Cart

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PD55015TR-E Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
-
ProductStatus:
Active
TransistorType:
LDMOS
Frequency:
500MHz
Gain:
14dB
Voltage-Test:
12.5 V
CurrentRating(Amps):
5A
NoiseFigure:
-
Current-Test:
150 mA
Power-Output:
15W
Voltage-Rated:
40 V

PD55015TR-E this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including PD55015TR-E price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for PD55015TR-E to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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PD55015TR-E information

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PD55015TR-E Typical application Circuitry

PD55015TR-E

The PD55015TR-E is a high-performance RF power LDMOS transistor designed for broadband applications. This device is particularly suited for RF power amplifiers in applications such as cellular base stations, broadcast transmitters, and RF heating, offering high efficiency, gain, and thermal performance.

Application Scenarios:

One common application for the PD55015TR-E is in cellular base station power amplifiers, where it amplifies the RF signals before they are transmitted by the antenna.

Parameter Characteristics:

The PD55015TR-E features high power gain and efficiency, operating in various frequency bands. It is designed to handle high power levels with excellent thermal stability, making it ideal for continuous operation in demanding environments.

Circuit Connection Details:

- Biasing the Gate: For optimal operation, the gate of the PD55015TR-E needs to be properly biased. This is typically done by connecting a bias tee to the gate pin (G), which allows for the application of a DC bias voltage while simultaneously allowing the RF signal to pass through.

- RF Input: The RF input signal is applied to the gate (G) through a coupling capacitor, which blocks DC while allowing the RF signal to pass. This capacitor should be chosen based on the operating frequency to ensure minimal impedance to the RF signal.

- RF Output: The drain (D) serves as the output for the amplified RF signal. To increase power transfer and efficiency, a matching network is frequently placed between the drain and the output to the antenna. This network typically consists of inductors and capacitors to match the impedance of the PD55015TR-E to the antenna.

- Supply Voltage: The drain (D) also needs to be connected to the supply voltage through an RF choke, which allows DC power to the transistor while blocking RF from getting into the power supply.

Design Considerations:

- Thermal Management: Given the high power levels the PD55015TR-E can handle, effective thermal management is crucial. A heat sink or cooling system may be necessary to dissipate heat and maintain stable operation.

- Gate Bias Stability: The gate bias voltage must be carefully regulated to prevent damage to the PD55015TR-E and ensure consistent performance. A stable and precise biasing circuit is essential.

- Input and Output Matching: The PD55015TR-E's input and output impedances need to match the source and load impedances, respectively, in order to provide the highest possible power and efficiency. This typically involves designing matching networks with reactive components.

- Protection Circuits: To safeguard the PD55015TR-E from over-voltage, over-current, and reverse polarity conditions, protective circuits should be incorporated. This can involve placing fuses, resistors, and diodes at key locations across the circuit.

By addressing these considerations and properly integrating the PD55015TR-E into the circuit, designers can harness its full capabilities for high-performance RF amplification in various applications.

PD55015TR-E FAQ

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3. Are the PD55015TR-E price and inventory displayed accurate?

The price and inventory of PD55015TR-E fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

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6. What is the process for return or replacement of PD55015TR-E?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the PD55015TR-E we delivered, we will accept the replacement or return of the PD55015TR-E only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of PD55015TR-E.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations