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Name: MW6S010NR1
Brand: NXP USA Inc.
SKU: MW6S010NR1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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NXP USA Inc. MW6S010NR1

Part No.:: MW6S010NR1

Manufacturer:: NXP USA Inc.

Package:: TO-270AA

Datasheet:: MW6S010NR1.pdf

Description:: FET RF 68V 960MHZ TO270-2

In Stock:: 222

Quantity:: Add To Cart

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MW6S010NR1 Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
-
ProductStatus:
Not For New Designs
TransistorType:
LDMOS
Frequency:
960MHz
Gain:
18dB
Voltage-Test:
28 V
CurrentRating(Amps):
-
NoiseFigure:
-
Current-Test:
125 mA
Power-Output:
10W
Voltage-Rated:
68 V

MW6S010NR1 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including MW6S010NR1 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for MW6S010NR1 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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MW6S010NR1 information

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MW6S010NR1 Typical application Circuitry

MW6S010NR1

High-performance RF power transistors like the MW6S010NR1 are made for industrial and commercial broadband applications. This device is particularly suited for applications requiring high output power and wide bandwidth, such as RF amplifiers in broadcast transmitters, cellular and wireless communication infrastructure, and RF energy applications.

Application Scenario:

Let's consider the MW6S010NR1 in the context of a broadband RF power amplifier used in wireless communication infrastructure, such as a cell site amplifier. This scenario is critical for enhancing the reach and quality of wireless communications across various frequencies.

Circuit Connection Details:

- Gate Biasing: The MW6S010NR1 requires appropriate gate biasing to operate efficiently. Connect the gate bias through a resistor to the gate pin (G), ensuring the voltage is within the recommended range specified by the datasheet. This setup controls the transistor's operating point, optimizing performance for the intended application.

- Drain Supply Voltage: Connect a drain supply voltage to the drain pin (D) of the MW6S010NR1, suitable for the desired output power level. It is essential to use a voltage source that can provide the necessary current without significant voltage drop under load.

- Input Signal Coupling: Use a capacitor to couple the RF input signal to the gate pin (G). This capacitor blocks DC while allowing the RF signal to pass, preventing distortion of the input signal and ensuring the stability of the gate bias point.

- Output Matching Network: Connect an output matching network to the drain pin (D) to optimize the impedance match to the load (e.g., an antenna or further amplifier stages). This network maximizes power transfer and efficiency, essential for high-power applications.

- Input Matching Network: Connect an input matching network to the gate pin (G) to ensure that the input impedance matches that of the preceding stage. Proper matching improves the gain and overall performance of the amplifier.

Design considerations:

- Thermal management: During operation, the MW6S010NR1 has the potential to produce a lot of heat. Designing an effective thermal management system, including heat sinks or forced air cooling, is crucial to maintain the transistor within safe operating temperatures and ensure long-term reliability.

- Linearity and Distortion: In applications like cellular base stations, the linearity of the amplifier is paramount to avoid signal distortion. Employing feedback mechanisms or predistortion techniques can help maintain the linearity of the MW6S010NR1-based amplifier.

- Protection Circuits: Incorporating protection circuits such as over-current, over-voltage, and temperature sensing can prevent damage to the MW6S010NR1 under fault conditions. These circuits help ensure the longevity and reliability of the amplifier.

- Bias Stability: The stability of the gate bias voltage under various operating conditions is vital for consistent performance. Implementing a stable biasing network, possibly with temperature compensation, can ensure the MW6S010NR1 operates within its optimal range.

- Isolation: Adequate isolation between the input and output of the MW6S010NR1 amplifier is necessary to prevent oscillations and ensure stable operation. This may involve physical layout strategies and the use of isolators or circulators in the signal path.

Integrating the MW6S010NR1 into a broadband RF power amplifier for wireless communication infrastructure highlights its capability to enhance signal strength and quality over a wide frequency range. The design of such an amplifier requires careful consideration of biasing, matching, thermal management, and protection to leverage the MW6S010NR1's potential fully.

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6. What is the process for return or replacement of MW6S010NR1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the MW6S010NR1 we delivered, we will accept the replacement or return of the MW6S010NR1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of MW6S010NR1.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations