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Name: BLP9G0722-20GZ
Brand: Ampleon USA Inc.
SKU: BLP9G0722-20GZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Ampleon USA Inc. BLP9G0722-20GZ

Part No.:: BLP9G0722-20GZ

Manufacturer:: Ampleon USA Inc.

Package:: SOT-1483-1

Datasheet:: BLP9G0722-20GZ.pdf

Description:: RF MOSFET LDMOS 28V SOT1483-1

In Stock:: 692

Quantity:: Add To Cart

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BLP9G0722-20GZ Specifications

Packaging:
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series:
-
ProductStatus:
Active
TransistorType:
LDMOS
Frequency:
400MHz ~ 2.7GHz
Gain:
19dB
Voltage-Test:
28 V
CurrentRating(Amps):
1.4µA
NoiseFigure:
-
Current-Test:
180 mA
Power-Output:
43dBm
Voltage-Rated:
65 V

BLP9G0722-20GZ this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including BLP9G0722-20GZ price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for BLP9G0722-20GZ to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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BLP9G0722-20GZ information

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BLP9G0722-20GZ Typical application Circuitry

The BLP9G0722-20GZ is a high-performance RF power LDMOS transistor from the LDMOS series, specifically designed for a wide range of high-frequency applications including base station applications in the cellular frequency bands. This device is known for its high power efficiency, wideband capabilities, and exceptional ruggedness, making it an ideal choice for RF power amplifiers in telecommunications infrastructure, broadcast transmitters, and industrial applications.

1. Series Characteristics: The LDMOS series, including the BLP9G0722-20GZ, is recognized for its Laterally Diffused Metal Oxide Semiconductor technology, which provides high gain, efficiency, and linearity in RF power amplification. These transistors have a wide frequency range of operation and are made to withstand high power levels.

2. Pin Configuration: The BLP9G0722-20GZ is typically packaged in a ceramic package designed for high thermal conductivity and RF performance. It includes essential pins such as the Gate (G) for input signal, the Drain (D) for output signal, and the Source (S) which is usually connected to the ground. For heat dissipation and mechanical stability, it could additionally include extra pins or leads.

3. Circuit Integration Approach: In integrating the BLP9G0722-20GZ into an RF power amplifier circuit, the Gate pin is connected to the RF input signal, often through a matching network to optimize input impedance. The Drain pin is connected to the RF output, also through a matching network to optimize output impedance and maximize power transfer. The Source pin is typically connected to the ground, providing a return path for the current.

4. System Connections: Additional considerations include the integration of biasing circuits to properly bias the Gate and Drain for optimal operation. The device may also require a heat sink or other cooling mechanisms due to the high power levels it manages. In order to reduce interference and preserve signal integrity, proper radio frequency grounding and shielding procedures are crucial.

5. Incorporating Protective Features: The BLP9G0722-20GZ is designed with inherent ruggedness to withstand mismatched load conditions. However, external protective features such as RF isolators, circulators, or VSWR (Voltage Standing Wave Ratio) protection circuits can be added to protect the device from excessive reflected power and other adverse operating conditions.

6. Communication and Configuration: While the BLP9G0722-20GZ does not typically feature direct communication or configuration interfaces, careful design of the RF signal path, bias networks, and matching circuits is crucial for achieving desired performance. Simulation and tuning of the RF circuit are often required to optimize the performance of the amplifier using the LDMOS transistor.

Employing the BLP9G0722-20GZ in RF power amplifier designs provides a robust solution for handling high power levels with high efficiency and linearity across a broad frequency range. Because of its cutting-edge LDMOS architecture and technology, it is essential to the creation of high-performing RF amplification devices.

BLP9G0722-20GZ FAQ

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3. Are the BLP9G0722-20GZ price and inventory displayed accurate?

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6. What is the process for return or replacement of BLP9G0722-20GZ?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the BLP9G0722-20GZ we delivered, we will accept the replacement or return of the BLP9G0722-20GZ only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of BLP9G0722-20GZ.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations