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Name: BLF574,112
Brand: Ampleon USA Inc.
SKU: BLF574,112
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

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Ampleon USA Inc. BLF574,112

Part No.:: BLF574,112

Manufacturer:: Ampleon USA Inc.

Package:: SOT-539A

Datasheet:: BLF574,112.pdf

Description:: RF FET LDMOS 110V 26.5DB SOT539A

In Stock:: 3816

Quantity:: Add To Cart

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BLF574,112 Specifications

Packaging:
Tray
Series:
-
ProductStatus:
Active
TransistorType:
LDMOS (Dual), Common Source
Frequency:
225MHz
Gain:
26.5dB
Voltage-Test:
50 V
CurrentRating(Amps):
56A
NoiseFigure:
-
Current-Test:
1 A
Power-Output:
400W
Voltage-Rated:
110 V

BLF574,112 this integrated circuit is available in factory sealed anti static packs. at icwhale.com. Please read product page below detail information. including BLF574,112 price, data-sheet, in-stock availability, technical difficulties. Also. Quickly Enter the access of compare listing to find out replaceable electronic parts. If you want to retrieve comprehensive data for BLF574,112 to optimize the supply chain (including cross references, life-cycle, parametric, counterfeit risk, obsolescence managements forecasts), please contact to our Tech-supports team.

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BLF574,112 information

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BLF574,112 Typical application Circuitry

BLF574,112

The BLF574,112 is a high-power RF transistor, specifically designed for applications requiring efficient radio frequency (RF) amplification. It's a LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor, commonly used in RF power amplifiers. This component is typically found in applications like broadcast transmitters, industrial RF heating, and RF energy applications. Let's explore its application scenarios, key specifications, and a detailed circuit design:

BLF574,112: Functionality and Application Areas

Ideal Applications

- Broadcast Transmitters: Used in TV and radio broadcasting for high-power signal amplification.

- Industrial RF Heating: Suitable for applications involving RF heating due to its high power handling capacity.

- RF Energy Applications: Employed in various RF energy applications, including medical and scientific RF tools.

Key Specifications

- High-Power LDMOS Technology: Incorporates LDMOS technology, known for high efficiency and power handling in RF applications.

- Frequency Range: Capable of operating effectively in various RF frequency bands.

- Robust Power Output: Designed to deliver significant RF power, crucial for high-demand applications.

Circuit Design: BLF574,112 in a Broadcast Amplifier

1. RF Signal Input

- Gate (Pin 1): Connect the modulated RF input (e.g., audio or video signal) to the gate. This is the signal that will be amplified.

2. Power Supply Connection

- Drain (Pin 2): Attach to a high-power RF supply. The drain is the primary source of power for the amplification stage.

3. Amplified Output to Antenna

- Source (Pin 3): Connect the source to the broadcasting antenna or transmission line. This pin delivers the amplified RF signal.

4. Gate Biasing Configuration

- Bias Network (Pin 4): Establish an appropriate bias network for the gate. This network controls the operation and stability of the transistor.

Design Considerations

- Stable Power Supply: Ensure a reliable and robust power supply to handle the high-power requirements.

- Effective Heat Dissipation: Implement cooling solutions for the generated heat during operation.

- Impedance Matching: Achieve optimal impedance matching to maximize power transfer and minimize losses.

- Signal Integrity: Maintain the integrity and quality of the RF signal throughout the amplification.

- EMI Management: Design the PCB to minimize electromagnetic interference, ensuring signal clarity.

- Control of Gate Voltage: Precisely manage the gate voltage to prevent overdrive and ensure linear operation.

- Regulatory Adherence: Comply with regulations and standards, particularly in broadcasting applications.

- Environmental Considerations: Factor in the operating environment, as temperature and humidity can impact performance.

Incorporating the BLF574,112 into a circuit requires careful consideration of these factors to achieve optimal performance. For detailed information, including pin layout and electrical parameters, refer to the BLF574,112's datasheet and technical documentation.

BLF574,112 FAQ

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6. What is the process for return or replacement of BLF574,112?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the BLF574,112 we delivered, we will accept the replacement or return of the BLF574,112 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of BLF574,112.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations